Abstract: A method can be used for programming a group of memory cells of a non-volatile memory device in a programming window that has a duration longer than a programming duration of a memory cell. The programming window is subdivided into a number of time intervals. A programming profile that was determined by simulation while taking into account a reference criterion is retrieved. The programming profile includes, for each time interval, a maximum number of memory cells that can be triggered for programming within each time interval. The memory device is programmed in the programming window, interval-wise, using the programming profile.

Abstract: A method can be used for programming a group of memory cells of a non-volatile memory device in a programming window that has a duration longer than a programming duration of a memory cell. The programming window is subdivided into a number of time intervals. A programming profile that was determined by simulation while taking into account a reference criterion is retrieved. The programming profile includes, for each time interval, a maximum number of memory cells that can be triggered for programming within each time interval. The memory device is programmed in the programming window, interval-wise, using the programming profile.

Abstract: A method for controlling the breakdown of an antifuse memory cell formed on a semiconductor substrate, including the steps of: applying a programming voltage; detecting a breakdown time; and interrupting the application of the programming voltage at a time following the breakdown time by a post-breakdown time.

Abstract: A method for controlling the breakdown of an antifuse memory cell formed on a semiconductor substrate, including the steps of: applying a programming voltage; detecting a breakdown time; and interrupting the application of the programming voltage at a time following the breakdown time by a post-breakdown time.

Abstract: A method of controlling an array of ReRAM cells including programmable-resistance storage elements, including: during a standby period, applying a non-zero standby voltage between electrodes of the storage elements of each cell of the array.

Abstract: A method for forming a memory cell including a selection transistor and an antifuse transistor, in a technological process adapted to the manufacturing of a first and of a second types of MOS transistors of different gate thicknesses, this method including the steps of: forming the selection transistor according to the steps of manufacturing of the N-channel transistor of the second type; and forming the antifuse transistor essentially according the steps of manufacturing of the N-channel transistor of the first type, by modifying the following step: instead of performing a P-type implantation in the channel region at the same time as in the N-channel transistors of the first type, performing an N-type implantation in the channel region at the same time as in the P-channel transistors of the first type.

Abstract: A method for forming a memory cell including a selection transistor and an antifuse transistor, in a technological process adapted to the manufacturing of a first and of a second types of MOS transistors of different gate thicknesses, this method including the steps of: forming the selection transistor according to the steps of manufacturing of the N-channel transistor of the second type; and forming the antifuse transistor essentially according the steps of manufacturing of the N-channel transistor of the first type, by modifying the following step: instead of performing a P-type implantation in the channel region at the same time as in the N-channel transistors of the first type, performing an N-type implantation in the channel region at the same time as in the P-channel transistors of the first type.

Abstract: The integrated circuit includes a memory device of the irreversibly electrically programmable type. This device includes several memory cells, each memory cell having a dielectric zone positioned between a first electrode and a second electrode. Each memory cell is further associated with an access transistor. At least one first electrically conductive link electrically couples to the first electrodes of at least two memory cells, these first two electrodes being coupled to one and the same bias voltage. The first electrically conductive link is positioned in substantially a same plane as the first electrodes of the two memory cells.