Patents by Inventor Elizabeth A. Langlois

Elizabeth A. Langlois has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Eliminating air pockets under a polished pad
    Patent number: 6561891
    Abstract: A polishing pad assembly is provided that is useful for the chemical mechanical polishing of glass and electrical devices such as semiconductor wafers that comprises a polish pad and a semi-rigid base material firmly adhered to the polishing pad for positioning on a polishing platen of a polishing machine; wherein the semi-rigid base material has a modulus of rigidity of 0.01-50 GPa (GigaPascals) determined according to ASTM D 790, a thickness of 0.25-15.0 mm, and a grooved surface having a pitch of 5-100 mm and the grooves have a width of 0.025-2.5 mm and a depth of 0.1-2.5 mm.
    Type: Grant
    Filed: May 22, 2001
    Date of Patent: May 13, 2003
    Assignee: Rodel Holdings, Inc.
    Inventors: Stanley E. Eppert, Jr., Adam Manzonie, Peter W. Freeman, Elizabeth A. Langlois
  • Control of removal rates in CMP
    Publication number: 20020019202
    Abstract: A two-step method for chemical mechanical polishing of a semiconductor substrate having successive layers, comprised of, a metal layer, an underlying barrier film and an underlying dielectric layer. The first polishing step is performed utilizing a slurry composition selective to the metal in the metal layer, to remove the metal at a high removal rate during polishing, and the second polishing step is performed utilizing a slurry composition selective to the barrier film and least selective to the metal layer and the underlying dielectric layer. In an alternate embodiment, the second polishing step is performed with a slurry equally selective to the barrier layer and the underlying dielectric layer and least selective to the metal of the metal layer, to remove the barrier layer at a high removal rate during polishing, and level a surface of the dielectric layer to the surface of the metal interconnection structure in the underlying dielectric layer.
    Type: Application
    Filed: February 28, 2001
    Publication date: February 14, 2002
    Inventors: Terence M. Thomas, Qianqiu (Christine) Ye, Joseph K. So, Peter A. Burke, Vikas Sachan, Elizabeth A. Langlois, Keith G. Pierce, Craig D. Lack, David Gettman, Hiroyuki Senoo, Kouchi Yoshida, Yoshikazu Nishida, Vilas N. Koinkar, Raymond Lee Lavoie
  • Eliminating air pockets under a polishing pad
    Publication number: 20020002027
    Abstract: A polishing pad assembly is provided that is useful for the chemical mechanical polishing of glass and electrical devices such as semiconductor wafers that comprises a polish pad and a semi-rigid base material firmly adhered to the polishing pad for positioning on a polishing platen of a polishing machine; wherein the semi-rigid base material has a modulus of rigidity of 0.01-50 GPa (GigaPascals) determined according to ASTM D 790, a thickness of 0.25-15.0 mm, and a grooved surface having a pitch of 5-100 mm and the grooves have a width of 0.025-2.5 mm and a depth of 0.1-2.5 mm.
    Type: Application
    Filed: May 22, 2001
    Publication date: January 3, 2002
    Inventors: Stanley E. Eppert, Adam Manzonie, Peter W. Freeman, Elizabeth A. Langlois