Patents by Inventor Elizabeth Bradshaw

Elizabeth Bradshaw has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250022027
    Abstract: Methods, systems, and computer storage media for providing generative artificial intelligence (AI) personalization management using a generative AI personalization engine in an item listing system. A generative AI personalization engine supports generative AI personalization management based on an automotive personalization platform including personalization training operations, personalization operations, and personalization interfaces associated with a generative AI model and an automotive domain. The generative AI personalization engine provides generative AI personalization engine operations to improve personalization and presentation of automotive-related data in an item listing system. In operation, a request associated with a user is accessed. Based on the request, automotive personalization data associated with a generative AI model is accessed.
    Type: Application
    Filed: December 27, 2023
    Publication date: January 16, 2025
    Inventors: Richard Vance SIPE, III, Corey Alan SPRAGUE, Maksim ZADORSKII, Nickalas N. BRADSHAW, Lauren Elizabeth BOEDIGHEIMER, Ryan Daniel JONES, Yan NI
  • Publication number: 20240156846
    Abstract: This invention relates generally to neurodegenerative diseases and conditions (e.g., Alzheimer's disease) characterized with dysfunctional energetic function, unregulated microglia phagocytic activity and other related de-regulated biological functions. This invention further relates to methods and compositions for treating such neurodegenerative diseases and conditions with pharmaceutical compositions capable of protecting neurons from cell death and unregulated microglia phagocytic activity.
    Type: Application
    Filed: February 24, 2023
    Publication date: May 16, 2024
    Inventors: Rui Chang, Patrick T. Ronaldson, Qianying He, Wassim ELYAMAN, Elizabeth BRADSHAW, Kuixi ZHU
  • Publication number: 20230420258
    Abstract: A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.
    Type: Application
    Filed: July 5, 2023
    Publication date: December 28, 2023
    Inventors: Damien Thomas Gilmore, Jonathan P. Davis, Azghar H Khazi-Syed, Shariq Arshad, Khanh Quang Le, Kaneez Eshaher Banu, Jonathan Roy Garrett, Sarah Elizabeth Bradshaw, Eugene Clayton Davis
  • Publication number: 20230331780
    Abstract: The present disclosure provides compositions and methods for disrupting the interaction of a siglec protein and its binding partners, and thereby treating neurodegenerative disease.
    Type: Application
    Filed: January 31, 2023
    Publication date: October 19, 2023
    Inventors: Elizabeth Bradshaw, Wassim Elyaman
  • Patent number: 11742208
    Abstract: A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.
    Type: Grant
    Filed: March 25, 2020
    Date of Patent: August 29, 2023
    Assignee: Texas Instruments Incorporated
    Inventors: Damien Thomas Gilmore, Jonathan P. Davis, Azghar H Khazi-Syed, Shariq Arshad, Khanh Quang Le, Kaneez Eshaher Banu, Jonathan Roy Garrett, Sarah Elizabeth Bradshaw, Eugene Clayton Davis
  • Publication number: 20210305050
    Abstract: A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.
    Type: Application
    Filed: March 25, 2020
    Publication date: September 30, 2021
    Applicant: Texas Instruments Incorporated
    Inventors: Damien Thomas Gilmore, Jonathan P. Davis, Azghar H Khazi-Syed, Shariq Arshad, Khanh Quang Le, Kaneez Eshaher Banu, Jonathan Roy Garrett, Sarah Elizabeth Bradshaw, Eugene Clayton Davis