Abstract: A Mach-Zehnder modulator that employs quantum dots to provide a push-pull drive operation. The Mach-Zehnder modulator includes a first arm having a first PIN semiconductor device and a second arm having a second PIN semiconductor device, where the intrinsic layers of the PIN devices include a quantum dot structure. A first DC bias signal is applied to one of the PIN devices, and a second DC bias signal is applied to the other PIN device. The first DC bias signal biases the intrinsic layer at an operating voltage where the index of refraction of the intrinsic layer is at a positive portion of an electro-refraction transfer function, and the second DC bias potential biases the intrinsic layer at an operating voltage where the index of refraction of the intrinsic layer is at a negative portion of the transfer function.

Abstract: A PIN electro-optical traveling wave modulator (10) including diffraction gratings (34, 36) positioned at opposing sides of an optical waveguide (20) that act to change the propagation pattern of the waveguide (20). The modulator (10) includes an N-type layer (14), a P-type layer (18) and an intrinsic layer (16) acting as the waveguide (20). A metal electrode (26) is in electrical contact with the N-type layer (14), and a metal electrode (30) is in electrical contact with the P-type layer (18). The electrodes (26, 30) define an RF transmission line. An optical wave (22) propagates along the waveguide (20) and interacts with the gratings (34, 36) which slow the optical wave (22) to match its speed to the speed of the RF wave in the transmission line. In one embodiment, the gratings (34, 36) are 2-D gratings formed by vertical holes (38) in the waveguide (20).