Patents by Inventor Elizabeth L. Patterson

Elizabeth L. Patterson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOS Isolation processing
    Patent number: 4551910
    Abstract: A process for growing field oxide regions in an MOS circuit. An initial thermally grown layer of silicon nitride seals the substrate surface and reduces lateral oxidation, or bird's beak formation along the substrate-nitride interface. Field oxidation takes place in two steps, with the first step being a dry oxidation in HCL and the second taking place in steam.
    Type: Grant
    Filed: November 27, 1984
    Date of Patent: November 12, 1985
    Assignee: Intel Corporation
    Inventor: Elizabeth L. Patterson