Abstract: A technique comprising: forming on a support film a first stack of layers defining an array of photodiodes; forming over the first stack of layers in situ on the support film a second stack of layers defining electrical circuitry by which the photoresponse of each photodiode is independently detectable via an array of conductors outside the array of photodiodes; wherein forming the first stack of layers comprises depositing an organic semiconductor material over a first electrode, and depositing a second electrode over the organic semiconductor material, wherein the electrical circuitry comprises transistors including photosensitive semiconductor channels, and the second electrode also functions to substantially block the incidence of light on the photosensitive semiconductor channels from the direction of the support film.

Abstract: A technique comprising: forming a conductor layer in contact with a dielectric layer; patterning the conductor layer using an acidic patterning agent to form a source-drain conductor pattern for one or more transistors at a surface of a workpiece; and forming an organic semiconductor layer over the surface of the workpiece to provide one or more semiconductor channels for the one or more transistors; wherein the method further comprises: prior to forming the conductor layer, treating the dielectric layer with an alkaline agent.

Abstract: A technique, comprising: forming a stack comprising a semiconductor layer for providing the semiconductor channels of one or more transistors, and an insulator layer; and patterning the stack so as to form in a single process both: (i) one or more interconnection holes for connecting a conductor level on one side of the stack to a conductor level on the opposite side of the stack; and (ii) one or more leakage reduction trenches for reducing leakage paths via the semiconductor between conductor elements on one side of the stack.

Abstract: A technique comprising: forming on a support film a first stack of layers defining an array of photodiodes; forming over the first stack of layers in situ on the support film a second stack of layers defining electrical circuitry by which the photoresponse of each photodiode is independently detectable via an array of conductors outside the array of photodiodes; wherein forming the first stack of layers comprises depositing an organic semiconductor material over a first electrode, and depositing a second electrode over the organic semiconductor material, wherein the electrical circuitry comprises transistors including photosensitive semiconductor channels, and the second electrode also functions to substantially block the incidence of light on the photosensitive semiconductor channels from the direction of the support film.

Abstract: A technique, comprising: forming a stack comprising a semiconductor layer for providing the semiconductor channels of one or more transistors, and an insulator layer; and patterning the stack so as to form in a single process both: (i) one or more interconnection holes for connecting a conductor level on one side of the stack to a conductor level on the opposite side of the stack; and (ii) one or more leakage reduction trenches for reducing leakage paths via the semiconductor between conductor elements on one side of the stack.