Abstract: A coating composition, and uses thereof, including a solvent, metal oxide nanoparticles dispersed in this solvent, and a high carbon polymer dissolved in this solvent, where the high carbon polymer includes a repeat unit of structure (1), a hydroxybiphenyl repeat unit of structure (2) and a moiety containing a fused aromatic containing moiety of structure (3) where R1 and R2 are independently selected from the group of hydrogen, an alkyl and a substituted alkyl, Ar is an unsubstituted or substituted fused aromatic ring and X1 is an alkylene spacer, or a direct valence bound.

Abstract: The present invention relates a coating composition comprising a solvent, metal oxide nanoparticles dispersed in this solvent, a high carbon polymer dissolved in this solvent, where the high carbon polymer comprises a repeat unit of structure (1), a hydroxybiphenyl repeat unit of structure (2) and an moiety containing a fused aromatic containing moiety of structure (3) wherein R1 and R2 are independently selected from the group consisting of hydrogen, an alkyl and a substituted alkyl, Ar is an unsubstituted or substituted fused aromatic ring and X1 is an alkylene spacer, or a direct valence bound. The invention also relates to a processes where this composition is used in lithographic applications as a patterned hard mask either through and inverse tone hard mask pattern transfer process or a conventional mask pattern process using a photoresist, to pattern the hard mask and a hard mask to pattern a semiconductor substrate with a plasma.

Abstract: Masking compositions for preventing metal contamination at substrate edges during the manufacture of electronic devices. The masking compositions have a unit of structure (I): Also provided are methods of using the masking compositions for manufacturing electronic devices.

Abstract: The present invention relates to a novel composition with improved stability containing soluble, multi-ligand-substituted metal compound, a polyol compound and a solvent useful for filling material on photoresist patterns with good trench or via filling properties of microlithographic features, where the filled patterns having good plasma etch resistance in oxygen based plasmas and are used as a hard mask in forming fine patterns on semiconductor substrates by pattern transfer of this hard mask. The present invention further relates to using the novel composition in methods for manufacturing electronic devices.

Abstract: The present invention relates to novel compositions comprising a metal component selected from a group chosen from at least one polyoxometalate, at least one heteropolyoxometalate and a mixture thereof; and, at least one organic component. The present invention also relates to methods of preparing the nanorod arrays and the nanorod materials and films. The present invention also relates to novel compositions to generate metal-oxide rich films, and also relates to processes for via or trench filling, reverse via or trench filling and imaging with underlayers. The materials are useful in wide range of manufacturing applications in many industries, including the semiconductor devices, electro-optical devices and energy storage industry.

Abstract: The present invention relates to a novel composition with improved stability containing soluble, multi-ligand-substituted metal compound, a polyol compound and a solvent useful for filling material on photoresist patterns with good trench or via filling properties of microlithographic features, where the filled patterns having good plasma etch resistance in oxygen based plasmas and are used as a hard mask in forming fine patterns on semiconductor substrates by pattern transfer of this hard mask. The present invention further relates to using the novel composition in methods for manufacturing electronic devices.

Abstract: The present invention relates to a novel spin coatable composition comprising (a) metallosilicic acid; (b) at least one compound comprising two or more 4-hydroxyphenyl groups; and, c) a solvent. The component b) can be a 4-hydroxyphenyl compound of structure (I) wherein W is a linking group chosen from the group consisting of an organic linking moiety, a heteroatom containing linking moiety and a direct valence bond, m is a positive integer of 1 and n is a positive integer equal to 1 or and Ri, Rii, Riii and Riv are independently chosen substituents from a group consisting of hydrogen, (C1-C6) alkyl, (C1-C6) alkoxy, (C6-C20) aryl, halides (such as Cl, I, F), hydroxyl, alkylcarbonyl (alkyl-C(?O)—), alkylcarbonyloxy (alkyl-C(?O)—O—), alkyloxycarbonyl (alkyl-O—C(?O)—), alkyloxycarbonyloxy (alkyl-O—C(?O)—O—) and mixtures of these; and a solvent. The present invention further relates to processes using the novel compositions.

Abstract: The present invention relates to novel, soluble, multi-ligand-substituted metal oxide compounds to form metal oxide films with improved stability as well as compositions made from them and methods of their use. Specifically, the invention pertains to compounds having the following structure (I) wherein M is a metal and n is 1 to 20, and wherein at least one of R1, R2, R3, and R4 is i) and at least at least one of R1, R2, R3, and R4 is ii), where i) is a silicon bearing organic moiety having at least 2 carbons, and ii) is an organic moiety. The invention also relates to spin-coatable compositions of compounds of structure (I) dissolved into a solvent. The present invention further relates to processes using this spin coatable composition to form a coating on a patterned substrate.

Abstract: The present invention relates to an absorbing hard mask antireflective coating composition comprising a novel polymer, where the novel polymer comprises in the backbone of the polymer four repeat units -A-, -B-, -C- and -D-, where A is repeat unit which comprises a fused aromatic ring in its backbone, B has the structure (1), C is a hydroxylbiphenyl of structure (2) and D is a derivatized fluorene of structure (3), where R1 is C1-C4alkyl, R2 is C1-C4alkyl, R3 and R4 are independently hydrogen or C1-C4 alkyl, and Ar? and Ar? are independently phenylenic, or naphthalenic derived moieties, R5 and R6 are independently —OH or —(CH2)nOH where n=2-4, and R7 and R8 are independently hydrogen or C1-C4 alkyl. This invention also relates to a process for forming an image using the novel antireflective coating composition.

Abstract: The present invention relates to novel compositions comprising a metal component selected from a group chosen from at least one polyoxometalate, at least one heteropolyoxometalate and a mixture thereof; and, at least one organic component. The present invention also relates to methods of preparing the nanorod arrays and the nanorod materials and films. The present invention also relates to novel compositions to generate metal-oxide rich films, and also relates to processes for via or trench filling, reverse via or trench filling and imaging with underlayers. The materials are useful in wide range of manufacturing applications in many industries, including the semiconductor devices, electro-optical devices and energy storage industry.

Abstract: The present invention relates to a novel spin coatable composition comprising (a) metallosilicic acid; (b) at least one compound comprising two or more 4-hydroxyphenyl groups; and, c) a solvent. The component b) can be a 4-hydroxyphenyl compound of structure (I) wherein W is a linking group chosen from the group consisting of an organic linking moiety, a heteroatom containing linking moiety and a direct valence bond, m is a positive integer of 1 and n is a positive integer equal to 1 or and Ri, Rii, Riii and Riv are independently chosen substituents from a group consisting of hydrogen, (C1-C6) alkyl, (C1-C6) alkoxy, (C6-C20) aryl, halides (such as Cl, I, F), hydroxyl, alkylcarbonyl (alkyl-C(?O)—), alkylcarbonyloxy (alkyl-C(?O)—O—), alkyloxycarbonyl (alkyl-O—C(?O)—), alkyloxycarbonyloxy (alkyl-O—C(?O)—O—) and mixtures of these; and a solvent. The present invention further relates to processes using the novel compositions.

Abstract: The present invention relates to novel, soluble, multi-ligand-substituted metal oxide compounds to form metal oxide films with improved stability as well as compositions made from them and methods of their use. Specifically, the invention pertains to a compounds having the following structure (I): wherein M is a metal and n is 1 to 20, and wherein at least one of R1, R2, R3, and R4 is i) and at least at least one of R1, R2, R3, and R4 is ii), where i) is a silicon bearing organic moiety having at least 2 carbons, and ii) is an organic moiety. The invention also relates to spin-coatable composition of compounds of structure (I) dissolved into a solvent. The present invention further relates to processes using this spin coatable composition to form a coating on a patterned substrate.

Abstract: The present invention relates to an absorbing hard mask antireflective coating composition comprising a novel polymer, where the novel polymer comprises in the backbone of the polymer four repeat units -A-, -B-, -C- and -D-, where A is repeat unit which comprises a fused aromatic ring in its backbone, B has the structure (1), C is a hydroxylbiphenyl of structure (2) and D is a derivatized fluorene of structure (3), where R1 is C1-C4alkyl, R2 is C1-C4alkyl, R3 and R4 are independently hydrogen or C1-C4 alkyl, and Ar? and Ar? are independently phenylenic, or naphthalenic derived moieties, R5 and R6 are independently —OH or —CH2)nOH where n=2-4, and R7 and R8 are independently hydrogen or C1-C4 alkyl. This invention also relates to a process for forming an image using the novel antireflective coating composition.

Abstract: This invention relates generally to silicon based photoresist compositions that can be used in forming low k dielectric constant materials suitable for use in electronic devices, methods of their use and the electronic devices made therefrom.

Abstract: This invention relates generally to silicon based photoresist compositions that can be used in forming low k dielectric constant materials suitable for use in electronic devices, methods of their use and the electronic devices made therefrom.