Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) a silica abrasive; (b) an oxidizing agent; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 2 or less. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising a boron-doped polysilicon layer on a surface of the substrate, using said composition.

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) an anionic polymer having a weight average molecular weight of about 400 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity of at least about 1 cPs, a ratio of viscosity (cPs) to wt. % of silica abrasive of about 0.2 cPs/wt. % to about 1.5 cPs/wt. %, and a pH of about 9 to about 12. The invention additional provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) a nonionicpolymer having a weight average molecular weight of about 300 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity of at least about 2 cPs, and a pH of about 9 to about 12.

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from a ceria abrasive, a zirconia abrasive, and a combination thereof; (b) a self-stopping agent selected from a compound of formula (I), (c) optionally a nonionic polymer; (d) a cationic monomer compound; and (e) water, wherein the polishing composition has a pH of about 5.5 to about 8. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide and optionally polysilicon, using said composition.