Patents by Inventor Elliott Gerard Mc Namara

Elliott Gerard Mc Namara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200356013
    Abstract: Methods of controlling a patterning process are disclosed. In one arrangement, tilt data resulting from a measurement of tilt in an etching path through a target layer of a structure on a substrate is obtained. The tilt represents a deviation in a direction of the etching path from a perpendicular to the plane of the target layer. The tilt data is used to control a patterning process used to form a pattern in a further layer.
    Type: Application
    Filed: August 8, 2018
    Publication date: November 12, 2020
    Applicant: ASML NETHERLANDS B.V
    Inventors: Jeroen VAN DONGEN, Elliott Gerard MC NAMARA, Paul Christiaan HINNEN, Marinus JOCHEMSEN
  • Publication number: 20200185281
    Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.
    Type: Application
    Filed: February 14, 2020
    Publication date: June 11, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMAS, Paul Christiaan HINNEN, Elliott Gerard MC NAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER
  • Publication number: 20200126872
    Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.
    Type: Application
    Filed: December 19, 2019
    Publication date: April 23, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMAS, Paul Christiaan HINNEN, Elliott Gerard MC NAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER
  • Publication number: 20200117101
    Abstract: A lithographic apparatus prints a focus metrology pattern (T) on a substrate, the printed pattern including at least a first array of features (800). Features at any location within the array define a pattern that repeats at in at least a first direction of periodicity (X), while geometric parameters of the repeating pattern (w1, w3) vary over the array. A focus measurement is derived from measurements of the array at a selected subset of locations (ROI). As a result, the geometric parameters upon which the measurement of focus performance is based can be optimized by selection of locations within the array. The need to optimize geometric parameters of a target design on a reticle (MA) is reduced or eliminated. The measured property may be asymmetry, for example, and/or diffraction efficiency. The measured property for all locations may be captured by dark-field imaging, and a subset of locations selected after capture.
    Type: Application
    Filed: October 11, 2019
    Publication date: April 16, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Miguel GARCIA GRANDA, Elliott Gerard MC NAMARA, Pierre-Yves Jerome Yvan GUITTET, Eric Jos Anton BROUWER, Bart Peter Bert SEGERS
  • Publication number: 20200110342
    Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.
    Type: Application
    Filed: October 7, 2019
    Publication date: April 9, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Zili ZHOU, Nitesh Pandey, Olger Victor Zwier, Patrick Warnaar, Maurits Van Der Schaar, Elliott Gerard MC Namara, Arie Jeffrey Den Boef, Paul Christiaan Hinnen, Murat Bozkurt, Joost Jeroen Ottens, Kaustuve Bhattacharyya
  • Publication number: 20190155173
    Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
    Type: Application
    Filed: November 2, 2018
    Publication date: May 23, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard Mc Namara, Thomas Theeuwes, Maria Isabel De La Fuente Valentin, Mir Homayoun Shahrjerdy, Arie Jeffrey Den Boef, Shu-jin Wang
  • Publication number: 20190137892
    Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.
    Type: Application
    Filed: April 21, 2017
    Publication date: May 9, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Hakki Erg√ľn CEKLI, Masashi ISHIBASHI, Wendy Johanna Marthina VAN DE VEN, Willem Seine Christian ROELOFS, Elliott Gerard MC NAMARA, Rizvi RAHMAN, Michiel KUPERS, Emil Peter SCHMITT-WEAVER, Erilk Henri Adriaan DELVIGNE
  • Publication number: 20190064653
    Abstract: A method of determining a parameter of a pattern transfer process and device manufacturing methods are disclosed. In one arrangement, a method includes obtaining a detected representation of radiation redirected by a structure. The structure is a structure formed by applying a pattern processing to a pattern transferred to an earlier formed structure by a pattern transfer process. The pattern processing is such as to remove one or more selected regions in a horizontal plane of the earlier formed structure to form a pattern in the horizontal plane. The pattern is defined by a unit cell that is mirror symmetric with respect to an axis of mirror symmetry. An asymmetry in the detected representation is determined. The determined asymmetry in the detected representation is used to determine a parameter of the pattern transfer process.
    Type: Application
    Filed: August 10, 2018
    Publication date: February 28, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Koen Van Witteveen, Wei-Chun Wang, Paul Jonathan Turner, Elliott Gerard Mc Namara, Giacomo Miceli
  • Publication number: 20190049859
    Abstract: A method, including: measuring a first plurality of instances of a metrology target on a substrate processed using a patterning process to determine values of at least one parameter of the patterning process using a first metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target; and measuring a second different plurality of instances of the metrology target on the same substrate to determine values of the at least one parameter of the patterning process using a second metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target, wherein the second metrology recipe differs from the first metrology recipe in at least one characteristic of the applying radiation to, and detecting radiation from, instances of the metrology target.
    Type: Application
    Filed: August 1, 2018
    Publication date: February 14, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Anagnostis TSIATMAS, Elliott Gerard MC NAMARA
  • Patent number: 9360768
    Abstract: A method defines one or more monitoring target profiles, collects and stores initial calibration data of the metrology apparatus, compiling a library of spectra that would be observed from inspection of the monitoring target profiles using the metrology apparatus calibrated according to the initial calibration data. Some operations can be performed periodically, e.g., on a daily basis: obtaining current calibration data from the apparatus, modeling the effect of the current calibration data on the metrology apparatus operation, and using the result of the modeling and the contents of the library to determine any differences between one or more values of the initial calibration data and the current calibration data, and how these changes will be translated into changes in the measurement output for a given number of stacks and geometries.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: June 7, 2016
    Assignee: ASML Netherlands B.V.
    Inventors: Gerardo Bottiglieri, Elliott Gerard Mc Namara, Ruben Alvarez Sanchez
  • Publication number: 20120330592
    Abstract: A method defines one or more monitoring target profiles, collects and stores initial calibration data of the metrology apparatus, compiling a library of spectra that would be observed from inspection of the monitoring target profiles using the metrology apparatus calibrated according to the initial calibration data. Some operations can be performed periodically, e.g., on a daily basis: obtaining current calibration data from the apparatus, modeling the effect of the current calibration data on the metrology apparatus operation, and using the result of the modeling and the contents of the library to determine any differences between one or more values of the initial calibration data and the current calibration data, and how these changes will be translated into changes in the measurement output for a given number of stacks and geometries.
    Type: Application
    Filed: May 29, 2012
    Publication date: December 27, 2012
    Applicant: ASML Netherlands B.V.
    Inventors: Gerardo Bottiglieri, Elliott Gerard Mc Namara, Ruben Alvarez Sanchez