Patents by Inventor Elliott M. Philofsky

Elliott M. Philofsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metallization system for semiconductive devices, devices utilizing such metallization system and method for making devices and metallization system
    Patent number: 4077045
    Abstract: A metallization system for metallurgically bonding a semiconductor die to metallic conducting slugs as terminals at the same time, and at the same temperature, that a surrounding glass sleeve is hermetically sealed to the conducting slugs for forming a zener diode, for example, is disclosed. The metallization system comprises a combination of aluminum, tin and palladium, for bonding to molybdenum, the aluminum being vapor deposited followed by a vapor co-deposition of aluminum and tin and further followed by a vapor deposited layer of palladium.
    Type: Grant
    Filed: January 3, 1974
    Date of Patent: February 28, 1978
    Assignee: Motorola, Inc.
    Inventors: Richard L. Greeson, Elliott M. Philofsky
  • Process for making semiconductor device
    Patent number: 4022931
    Abstract: A semiconductor device having metallization consisting essentially of beryllium. The beryllium makes ohmic contact by deposition on a substrate at 300.degree. C-400.degree. C or it is deposited at lower temperatures and then heat treated to render ohmic the contact to the semiconductor device.
    Type: Grant
    Filed: June 13, 1975
    Date of Patent: May 10, 1977
    Assignee: Motorola, Inc.
    Inventors: James R. Black, Elliott M. Philofsky
  • Metallization system for semiconductor devices, devices utilizing such metallization system and method for making devices and metallization system
    Patent number: 3987217
    Abstract: A metallization system for metallurgically bonding a semiconductor die to metallic conducting slugs as terminals at the same time, and at the same temperature, that a surrounding glass sleeve is hermetically sealed to the conducting slugs for forming a zener diode, for example, is disclosed. The metallization system comprises a combination of aluminum, tin and palladium, for bonding to molybdenum, the aluminum being vapor deposited followed by a vapor co-deposition of aluminum and tin and further followed by a vapor deposited layer of palladium.
    Type: Grant
    Filed: October 16, 1974
    Date of Patent: October 19, 1976
    Assignee: Motorola, Inc.
    Inventors: Richard L. Greeson, Elliott M. Philofsky
  • Metallization system for semiconductor devices, devices utilizing such metallization system and method for making devices and metallization system
    Patent number: 3985515
    Abstract: A metallization system for metallurgically bonding a semiconductor die to metallic conducting slugs as terminals at the same time, and at the same temperature, that a surrounding glass sleeve is hermetically sealed to the conducting slugs for forming a zener diode, for example, is disclosed. The metallization system comprises a combination of aluminum, tin and palladium, for bonding to molybdenum, the aluminum being vapor deposited followed by a vapor co-deposition of aluminum and tin and further followed by a vapor deposited layer of palladium.
    Type: Grant
    Filed: October 16, 1974
    Date of Patent: October 12, 1976
    Assignee: Motorola, Inc.
    Inventors: Richard L. Greeson, Elliott M. Philofsky
  • Metallization system for semiconductor devices, devices utilizing such metallization system and method for making devices and metallization system
    Patent number: 3945111
    Abstract: A metallization system for metallurgically bonding a semiconductor die to metallic conducting slugs as terminals at the same time, and at the same temperature, that a surrounding glass sleeve is hermetically sealed to the conducting slugs for forming a zener diode, for example, is disclosed. The metallization system comprises a combination of aluminum, tin and palladium, for bonding to molybdenum, the aluminum being vapor deposited followed by a vapor co-deposition of aluminum and tin and further followed by a vapor deposited layer of palladium.
    Type: Grant
    Filed: October 16, 1974
    Date of Patent: March 23, 1976
    Assignee: Motorola, Inc.
    Inventors: Richard L. Greeson, Elliott M. Philofsky