Patents by Inventor Elliott R. Brown
Elliott R. Brown has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11916162Abstract: A unipolar-doped light emitting diode or laser diode is described. The diode includes a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions. The top and bottom regions create light emission by interband tunneling-induced photon emission. Systems including the unipolar-doped diode including LIDAR are also taught.Type: GrantFiled: October 28, 2020Date of Patent: February 27, 2024Assignee: Wright State UniversityInventors: Elliott R. Brown, Weidong Zhang, Tyler Growden, Paul Berger
-
Patent number: 11342482Abstract: Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.Type: GrantFiled: October 28, 2019Date of Patent: May 24, 2022Assignees: Wright State University, The Government of the United States of America, As Represented By The Secretary Of The Navy, Ohio State Innovation FoundationInventors: Elliott R. Brown, Weidong Zhang, Tyler Growden, Paul Berger, David Storm, David Meyer
-
Publication number: 20220020896Abstract: A unipolar-doped light emitting diode or laser diode is described. The diode includes a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions. The top and bottom regions create light emission by interband tunneling-induced photon emission. Systems including the unipolar-doped diode including LIDAR are also taught.Type: ApplicationFiled: October 28, 2020Publication date: January 20, 2022Inventors: Elliott R. Brown, Weidong Zhang, Tyler Growden, Paul Berger
-
Patent number: 11145947Abstract: RF and microwave radiation directing or controlling components are provided that may be monolithic, that may be formed from a plurality of electrodeposition operations and/or from a plurality of deposited layers of material, that may include switches, inductors, antennae, transmission lines, filters, hybrid couplers, antenna arrays and/or other active or passive components. Components may include non-radiation-entry and non-radiation-exit channels that are useful in separating sacrificial materials from structural materials. Preferred formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g. selective etching operations and/or back filling operations).Type: GrantFiled: December 11, 2019Date of Patent: October 12, 2021Assignee: Microfabrica Inc.Inventors: Elliott R. Brown, John D. Evans, Christopher A. Bang, Adam L. Cohen, Michael S. Lockard, Dennis R. Smalley, Morton Grosser
-
Publication number: 20200227805Abstract: RF and microwave radiation directing or controlling components are provided that may be monolithic, that may be formed from a plurality of electrodeposition operations and/or from a plurality of deposited layers of material, that may include switches, inductors, antennae, transmission lines, filters, hybrid couplers, antenna arrays and/or other active or passive components. Components may include non-radiation-entry and non-radiation-exit channels that are useful in separating sacrificial materials from structural materials. Preferred formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g. selective etching operations and/or back filling operations).Type: ApplicationFiled: December 11, 2019Publication date: July 16, 2020Applicant: Microfabrica Inc.Inventors: Elliott R. Brown, John D. Evans, Christopher A. Bang, Adam L. Cohen, Michael S. Lockard, Dennis R. Smalley, Morton Grosser
-
Patent number: 10575787Abstract: A hydration sensor is provided that includes a circulator having a plurality of ports, an amplitude-modulated coherent source connected to a first port of the circulator, a rectifier or other power sensor connected to a second port of the circulator followed by an RF baseband low-noise amplifier, a coupling structure connected to the third port of the circulator, and a demodulator connected to the output of the rectifier. The hydration sensor can include an RF low noise amplifier between the circulator and rectifier, and/or a second amplitude modulator between the circulator and the coupling structure. The coupling structure can be either a guided-wave near-field structure or an interfacial capacitive or inductive element. In the former case, the hydration is determined by measuring the reflectivity of the guided-wave radiation, and in the latter case it is determined by measuring the change of reflectivity (through change of impedance) of the interfacial element.Type: GrantFiled: April 17, 2017Date of Patent: March 3, 2020Assignee: Wright State UniversityInventors: Elliott R. Brown, Weidong Zhang
-
Patent number: 10461216Abstract: Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.Type: GrantFiled: September 25, 2017Date of Patent: October 29, 2019Assignee: Wright State UniversityInventors: Elliott R. Brown, Weidong Zhang, Tyler Growden, Paul R. Berger, David Storm, David Meyer
-
Publication number: 20190221911Abstract: RF and microwave radiation directing or controlling components are provided that may be monolithic, that may be formed from a plurality of electrodeposition operations and/or from a plurality of deposited layers of material, that may include switches, inductors, antennae, transmission lines, filters, hybrid couplers, antenna arrays and/or other active or passive components. Components may include non-radiation-entry and non-radiation-exit channels that are useful in separating sacrificial materials from structural materials. Preferred formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g. selective etching operations and/or back filling operations).Type: ApplicationFiled: October 22, 2018Publication date: July 18, 2019Applicant: Microfabrica Inc.Inventors: Elliott R. Brown, John D. Evans, Christopher A. Bang, Adam L. Cohen, Michael S. Lockard, Dennis R. Smalley, Morton Grosser
-
Patent number: 10215694Abstract: A device for measuring and characterizing solid-state devices or integrated circuits at RF frequencies up to 1.0 THz and beyond is provided that includes a transmitting photomixing probe structure and a receiving photomixing probe structure. The transmitting photomixing probe structure and the receiving photomixing probe structure are ac-coupled to the solid-state device or integrated circuit in a contact-free manner.Type: GrantFiled: November 1, 2017Date of Patent: February 26, 2019Assignee: Wright State UniversityInventor: Elliott R Brown
-
Publication number: 20190027644Abstract: Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.Type: ApplicationFiled: September 25, 2017Publication date: January 24, 2019Applicant: Wright State UniversityInventors: Elliott R. Brown, Weidong Zhang, Tyler Growden, Paul R. Berger, David Storm, David Meyer
-
Publication number: 20190011359Abstract: A device for measuring and characterizing solid-state devices or integrated circuits at RF frequencies up to 1.0 THz and beyond is provided that includes a transmitting photomixing probe structure and a receiving photomixing probe structure. The transmitting photomixing probe structure and the receiving photomixing probe structure are ac-coupled to the solid-state device or integrated circuit in a contact-free manner.Type: ApplicationFiled: November 1, 2017Publication date: January 10, 2019Applicant: Wright State UniversityInventor: Elliott R. Brown
-
Publication number: 20180241112Abstract: RF and microwave radiation directing or controlling components are provided that may be monolithic, that may be formed from a plurality of electrodeposition operations and/or from a plurality of deposited layers of material, that may include switches, inductors, antennae, transmission lines, filters, hybrid couplers, antenna arrays and/or other active or passive components. Components may include non-radiation-entry and non-radiation-exit channels that are useful in separating sacrificial materials from structural materials. Preferred formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g. selective etching operations and/or back filling operations).Type: ApplicationFiled: February 2, 2018Publication date: August 23, 2018Applicant: Microfabrica Inc.Inventors: Elliott R. Brown, John D. Evans, Christopher A. Bang, Adam L. Cohen, Michael S. Lockard, Dennis R. Smalley, Morton Grosser
-
Publication number: 20180231475Abstract: A hydration sensor is provided that includes a circulator having a plurality of ports, an amplitude-modulated coherent source connected to a first port of the circulator, a rectifier or other power sensor connected to a second port of the circulator followed by an RF baseband low-noise amplifier, a coupling structure connected to the third port of the circulator, and a demodulator connected to the output of the rectifier. The hydration sensor can include an RF low noise amplifier between the circulator and rectifier, and/or a second amplitude modulator between the circulator and the coupling structure. The coupling structure can be either a guided-wave near-field structure or an interfacial capacitive or inductive element. In the former case, the hydration is determined by measuring the reflectivity of the guided-wave radiation, and in the latter case it is determined by measuring the change of reflectivity (through change of impedance) of the interfacial element.Type: ApplicationFiled: April 17, 2017Publication date: August 16, 2018Applicant: Wright State UniversityInventors: Elliott R. Brown, Weidong Zhang
-
Patent number: 9823187Abstract: A device for measuring and characterizing solid-state devices or integrated circuits at RF frequencies up to 1.0 THz and beyond is provided that includes a transmitting photomixing probe structure and a receiving photomixing probe structure. The transmitting photomixing probe structure and the receiving photomixing probe structure are ac-coupled to the solid-state device or integrated circuit in a contact-free manner.Type: GrantFiled: November 7, 2016Date of Patent: November 21, 2017Assignee: Wright State UniversityInventor: Elliott R. Brown
-
Publication number: 20170263994Abstract: RF and microwave radiation directing or controlling components are provided that may be monolithic, that may be formed from a plurality of electrodeposition operations and/or from a plurality of deposited layers of material, that may include switches, inductors, antennae, transmission lines, filters, hybrid couplers, antenna arrays and/or other active or passive components. Components may include non-radiation-entry and non-radiation-exit channels that are useful in separating sacrificial materials from structural materials. Preferred formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g. selective etching operations and/or back filling operations).Type: ApplicationFiled: December 21, 2016Publication date: September 14, 2017Applicant: Microfabrica Inc.Inventors: Elliott R. Brown, John D. Evans, Christopher A. Bang, Adam L. Cohen, Michael S. Lockard, Dennis R. Smalley, Morton Grosser
-
Publication number: 20170115212Abstract: A device for measuring and characterizing solid-state devices or integrated circuits at RF frequencies up to 1.0 THz and beyond is provided that includes a transmitting photomixing probe structure and a receiving photomixing probe structure. The transmitting photomixing probe structure and the receiving photomixing probe structure are ac-coupled to the solid-state device or integrated circuit in a contact-free manner.Type: ApplicationFiled: November 7, 2016Publication date: April 27, 2017Applicant: Wright State UniversityInventor: Elliott R. Brown
-
Patent number: 9620834Abstract: Multi-layer, multi-material fabrication methods include depositing at least one structural material and at least one sacrificial material during the formation of each of a plurality of layers wherein deposited materials for each layer are planarized to set a boundary level for the respective layer and wherein during formation of at least one layer at least three materials are deposited with a planarization operation occurring before deposition of the last material to set a planarization level above the layer boundary level and wherein a planarization occurs after deposition of the last material level above the layer boundary level and wherein a planarization occurs after deposition of the last material whereby the boundary level for the layer is set. Some formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g.Type: GrantFiled: February 28, 2014Date of Patent: April 11, 2017Assignee: Microfabrica Inc.Inventors: Elliott R. Brown, John D. Evans, Christopher A. Bang, Adam L. Cohen, Michael S. Lockard, Dennis R. Smalley, Morton Grosser
-
Patent number: 9614266Abstract: RF and microwave radiation directing or controlling components are provided that may be monolithic, that may be formed from a plurality of electrodeposition operations and/or from a plurality of deposited layers of material, that may include switches, inductors, antennae, transmission lines, filters, hybrid couplers, antenna arrays and/or other active or passive components. Components may include non-radiation-entry and non-radiation-exit channels that are useful in separating sacrificial materials from structural materials. Preferred formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g. selective etching operations and/or back filling operations).Type: GrantFiled: March 31, 2015Date of Patent: April 4, 2017Assignee: Microfabrica Inc.Inventors: Elliott R. Brown, John D. Evans, Christopher A. Bang, Adam L. Cohen, Michael S. Lockard, Dennis R. Smalley, Morton Grosser
-
Patent number: 9518938Abstract: A device for measuring and characterizing solid-state devices or integrated circuits at RF frequencies up to 1.0 THz and beyond is provided that includes a transmitting photomixing probe structure and a receiving photomixing probe structure. The transmitting photomixing probe structure and the receiving photomixing probe structure are ac-coupled to the solid-state device or integrated circuit in a contact-free manner.Type: GrantFiled: January 29, 2013Date of Patent: December 13, 2016Assignee: WRIGHT STATE UNIVERSITYInventor: Elliott R. Brown
-
Patent number: 9356170Abstract: Terahertz (THz) distributed detectors, and arrays of detectors that utilize structured surface plasmonic effects for more efficient coupling to free space are discussed. One example distributed detector includes a detector junction comprising a Schottky or tunneling interface between a semiconductor and a detector metal, an ohmic junction comprising an ohmic interface between the semiconductor and an ohmic metal, and a gap that separates the detector junction from the ohmic junction. Structured surface plasmons concentrate an electric field in the gap when the distributed detector is exposed to THz radiation polarized perpendicular to the gap.Type: GrantFiled: March 17, 2014Date of Patent: May 31, 2016Assignee: WRIGHT STATE UNIVERSITYInventors: Elliott R. Brown, John R. Middendorf, John S. Cetnar