Abstract: A system for speeding up an establishment's foundation through Internet comprises a data storage device having databases built therein and an electronic hub connected to the data storage device through computer program. The electronic hub is cooperated with the data storage device, whereby is capable to communicate, examine the resource provider, save the resource provider, and match the resource provider and whereby speeds up the establishment's foundation. A method for speeding up founding establishment through Internet comprises communicating, examining the resource provider, saving the resource provider, and matching the resource provider.

Abstract: An bonding pad structure has a passivation layer over a copper layer having a pad window to expose a portion of the copper layer, a barrier layer conformal to a profile of the pad window, and an aluminum pad located in the pad window. The metal layer can be an aluminum, aluminum alloy or aluminum dominated layer for providing a better adhesion property between the copper layer and the bonding wire.

Abstract: An interconnect is formed on the substrate. The conductive structure at least includes a first conductive structure and a second conductive structure, which have a gap region in-between. The substrate is exposed at the gap region. A first structured dielectric layer is formed over the substrate to cover the first and the second conductive structures. The first structured dielectric layer also has a void at the gap region between the first and the second conductive structures. The void significantly extends to the whole gap region. The first structured dielectric layer also has an indent region above the void. An anti-etch layer fills the indent region of the first structured dielectric layer. As a result, the first structured dielectric layer has a substantially planar surface. A second structured dielectric layer is formed on the first structured dielectric layer and the anti-etch layer.

Abstract: An interconnect is formed on the substrate. The conductive structure at least includes a first conductive structure and a second conductive structure, which have a gap region in-between. The substrate is exposed at the gap region. A first structured dielectric layer is formed over the substrate to cover the first and the second conductive structures. The first structured dielectric layer also has a void at the gap region between the first and the second conductive structures. The void significantly extends to the whole gap region. The first structured dielectric layer also has an indent region above the void. An anti-etch layer fills the indent region of the first structured dielectric layer. As a result, the first structured dielectric layer has a substantially planar surface. A second structured dielectric layer is formed on the first structured dielectric layer and the anti-etch layer.

Abstract: A system for speeding up an establishment's foundation through Internet comprises a data storage device having databases built therein and an electronic hub connected to the data storage device through computer program. The electronic hub is cooperated with the data storage device, whereby is capable to communicate, examine the resource provider, save the resource provider, and match the resource provider and whereby speeds up the establishment's foundation. A method for speeding up founding establishment through Internet comprises communicating, examining the resource provider, saving the resource provider, and matching the resource provider.

Abstract: An interconnect is formed on the substrate. The conductive structure at least includes a first conductive structure and a second conductive structure, which have a gap region in-between. The substrate is exposed at the gap region. A first structured dielectric layer is formed over the substrate to cover the first and the second conductive structures. The first structured dielectric layer also has a void at the gap region between the first and the second conductive structures. The void significantly extends to the whole gap region. The first structured dielectric layer also has an indent region above the void. An anti-etch layer fills the indent region of the first structured dielectric layer As a result, the first structured dielectric layer has a substantially planar surface A second structured dielectric layer is formed on the first structured dielectric layer and the anti-etch layer.

Abstract: An bonding pad structure has a passivation layer over a copper layer having a pad window to expose a portion of the copper layer, a barrier layer conformal to a profile of the pad window, and an aluminum pad located in the pad window. The metal layer can be an aluminum, aluminum alloy or aluminum dominated layer for providing a better adhesion property between the copper layer and the bonding wire.

Abstract: An interconnect is formed on the substrate. The conductive structure at least includes a first conductive structure and a second conductive structure, which have a gap region in-between. The substrate is exposed at the gap region. A first structured dielectric layer is formed over the substrate to cover the first and the second conductive structures. The first structured dielectric layer also has a void at the gap region between the first and the second conductive structures. The void significantly extends to the whole gap region. The first structured dielectric layer also has an indent region above the void. An anti-etch layer fills the indent region of the first structured dielectric layer. As a result, the first structured dielectric layer has a substantially planar surface. A second structured dielectric layer is formed on the first structured dielectric layer and the anti-etch layer.

Abstract: An interconnect is formed on the substrate. The conductive structure at least includes a first conductive structure and a second conductive structure, which have a gap region in-between. The substrate is exposed at the gap region. A first structured dielectric layer is formed over the substrate to cover the first and the second conductive structures. The first structured dielectric layer also has a void at the gap region between the first and the second conductive structures. The void significantly extends to the whole gap region. The first structured dielectric layer also has an indent region above the void. An anti-etch layer fills the indent region of the first structured dielectric layer. As a result, the first structured dielectric layer has a substantially planar surface. A second structured dielectric layer is formed on the first structured dielectric layer and the anti-etch layer.

Abstract: Structures for reducing relative stress between HDP layer and passivation layer are proposed by the invention, where the HDP layer is formed by high density plasma and the passivation layer is a conventional passivation layer. The invention provides some structures that can be divided into two categories: one, a low stress passivation layer is directly formed on a HDP layer; another, a low stress layer is formed between passivation layer and HDP layer to reduce relative layer that between any two adjacent layers. Therefore, it is crystal-clear that possible structures of the invention comprise following varieties: First, a low stress passivation layer is located between a passivation layer and a HDP layer. Second, a lower stress passivation layer directly locates on a HDP layer. Third, a low stress layer is formed between a passivation layer and a HDP layer.

Abstract: An bonding pad structure has a passivation layer over a copper layer having a pad window to expose a portion of the copper layer, a barrier layer conformal to a profile of the pad window, and an aluminum pad located in the pad window. The metal layer can be an aluminum, aluminum alloy or aluminum dominated layer for providing a better adhesion property between the copper layer and the bonding wire.

Abstract: Structures for reducing relative stress between HDP layer and passivation layer are proposed by the invention, where the HDP layer is formed by high density plasma and the passivation layer is a conventional passivation layer. The invention provides some structures that can be divided into two categories: one, a low stress passivation layer is directly formed on a HDP layer; another, a low stress layer is formed between passivation layer and HDP layer to reduce relative layer that between any two adjacent layers. Therefore, it is crystal-clear that possible structures of the invention comprise following varieties: First, a low stress passivation layer is located between a passivation layer and a HDP layer. Second, a lower stress passivation layer directly locates on a HDP layer. Third, a low stress layer is formed between a passivation layer and a HDP layer.

Abstract: An interconnect structure has a substrate having devices already formed thereon. A dielectric layer covers over the substrate. A conductive structure having at least two substructure separated by an air gap is formed on the dielectric layer. A capping layer covers the conductive structure and the air gap. The capping layer at a portion above the air gap also fills into the air gap by a predetermined distance. The air gap may also extend into the dielectric layer to have a greater height. An etching stop layer is formed on the capping layer. An inter-metal dielectric layer is formed on the etching stop layer. The inter-metal dielectric layer, the etching stop layer and the capping layer are patterned to form an opening that exposes a top surface of the conductive structure.

Abstract: An interconnect structure has a substrate having devices already formed thereon. A dielectric layer covers over the substrate. A conductive structure having at least two substructure separated by an air gap is formed on the dielectric layer. A capping layer covers the conductive structure and the air gap. The capping layer at a portion above the air gap also fills into the air gap by a predetermined distance. The air gap may also extend into the dielectric layer to have a greater height. An etching stop layer is formed on the capping layer. An inter-metal dielectric layer is formed on the etching stop layer. The inter-metal dielectric layer, the etching stop layer and the capping layer are patterned to form an opening that exposes a top surface of the conductive structure.

Abstract: An interconnect structure has a substrate having devices already formed thereon. A dielectric layer covers over the substrate. A conductive structure having at least two substructure separated by an air gap is formed on the dielectric layer. A capping layer covers the conductive structure and the air gap. The capping layer at a portion above the air gap also fills into the air gap by a predetermined distance. The air gap may also extend into the dielectric layer to have a greater height. An etching stop layer is formed on the capping layer. An inter-metal dielectric layer is formed on the etching stop layer. The inter-metal dielectric layer, the etching stop layer and the capping layer are patterned to form an opening that exposes a top surface of the conductive structure.

Abstract: A system for speeding up an establishment's foundation through Internet comprises a data storage device having databases built therein and an electronic hub connected to the data storage device through computer program. The electronic hub is cooperated with the data storage device, whereby is capable to communicate, examine the resource provider, save the resource provider, and match the resource provider and whereby speeds up the establishment's foundation. A method for speeding up founding establishment through Internet comprises communicating, examining the resource provider, saving the resource provider, and matching the resource provider.

Abstract: An interconnect is formed on the substrate. The conductive structure at least includes a first conductive structure and a second conductive structure, which have a gap region in-between. The substrate is exposed at the gap region. A first structured dielectric layer is formed over the substrate to cover the first and the second conductive structures. The first structured dielectric layer also has a void at the gap region between the first and the second conductive structures. The void significantly extends to the whole gap region. The first structured dielectric layer also has an indent region above the void. An anti-etch layer fills the indent region of the first structured dielectric layer As a result, the first structured dielectric layer has a substantially planar surface A second structured dielectric layer is formed on the first structured dielectric layer and the anti-etch layer.

Abstract: An bonding pad structure has a passivation layer over a copper layer having a pad window to expose a portion of the copper layer, a barrier layer conformal to a profile of the pad window, and an aluminum pad located in the pad window. The metal layer can be an aluminum, aluminum alloy or aluminum dominated layer for providing a better adhesion property between the copper layer and the bonding wire.

Abstract: An interconnect structure has a substrate having devices already formed thereon. A dielectric layer covers over the substrate. A conductive structure having at least two substructure separated by an air gap is formed on the dielectric layer. A capping layer covers the conductive structure and the air gap. The capping layer at a portion above the air gap also fills into the air gap by a predetermined distance. The air gap may also extend into the dielectric layer to have a greater height. An etching stop layer is formed on the capping layer. An inter-metal dielectric layer is formed on the etching stop layer. The inter-metal dielectric layer, the etching stop layer and the capping layer are patterned to form an opening that exposes a top surface of the conductive structure.

Abstract: A method of fabricating a shallow trench isolation includes formation of a polishing stop layer. The polishing stop layer is formed in a fill material by performing ion implantation to implant atoms in the fill material. The depth of the polishing stop layer can be controlled by the energy of the implanted atoms. The polishing stop layer prevents the fill material from being dished by chemical-mechanical polishing. The polishing stop layer also prevents scratches from forming in the surface of the fill material, which is used to form isolation regions.