Patents by Inventor Elmar Falck
Elmar Falck has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11848377Abstract: A semiconductor component includes a semiconductor body having opposing first surface and second surfaces, and a side surface surrounding the semiconductor body. The semiconductor component also includes an active region including a first semiconductor region of a first conductivity type, which is electrically contacted via the first surface, and a second semiconductor region of a second conductivity type, which is electrically contacted via the second surface. The semiconductor component further includes an edge termination region arranged in a lateral direction between the first semiconductor region of the active region and the side surface, and includes a first edge termination structure and a second edge termination structure. The second edge termination structure is arranged in the lateral direction between the first edge termination structure and the side surface and extends from the first surface in a vertical direction more deeply into the semiconductor body than the first edge termination structure.Type: GrantFiled: May 4, 2021Date of Patent: December 19, 2023Assignee: Infineon Technologies AGInventors: Anton Mauder, Hans-Joachim Schulze, Matteo Dainese, Elmar Falck, Franz-Josef Niedernostheide, Manfred Pfaffenlehner
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Publication number: 20210257489Abstract: A semiconductor component includes a semiconductor body having opposing first surface and second surfaces, and a side surface surrounding the semiconductor body. The semiconductor component also includes an active region including a first semiconductor region of a first conductivity type, which is electrically contacted via the first surface, and a second semiconductor region of a second conductivity type, which is electrically contacted via the second surface. The semiconductor component further includes an edge termination region arranged in a lateral direction between the first semiconductor region of the active region and the side surface, and includes a first edge termination structure and a second edge termination structure. The second edge termination structure is arranged in the lateral direction between the first edge termination structure and the side surface and extends from the first surface in a vertical direction more deeply into the semiconductor body than the first edge termination structure.Type: ApplicationFiled: May 4, 2021Publication date: August 19, 2021Inventors: Anton Mauder, Hans-Joachim Schulze, Matteo Dainese, Elmar Falck, Franz-Josef Niedernostheide, Manfred Pfaffenlehner
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Patent number: 11018249Abstract: A semiconductor component includes a semiconductor body having opposing first surface and second surfaces, and a side surface surrounding the semiconductor body. The semiconductor component also includes an active region including a first semiconductor region of a first conductivity type, which is electrically contacted via the first surface, and a second semiconductor region of a second conductivity type, which is electrically contacted via the second surface. The semiconductor component further includes an edge termination region arranged in a lateral direction between the first semiconductor region of the active region and the side surface, and includes a first edge termination structure and a second edge termination structure. The second edge termination structure is arranged in the lateral direction between the first edge termination structure and the side surface and extends from the first surface in a vertical direction more deeply into the semiconductor body than the first edge termination structure.Type: GrantFiled: January 31, 2019Date of Patent: May 25, 2021Assignee: Infineon Technologies AGInventors: Anton Mauder, Hans-Joachim Schulze, Matteo Dainese, Elmar Falck, Franz-Josef Niedernostheide, Manfred Pfaffenlehner
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Patent number: 10943974Abstract: A channel stopper region extending from a first main surface into a component layer of a first conductivity type is formed in an edge region of a component region, the edge region being adjacent to a sawing track region. Afterward, a doped region extending from the first main surface into the component layer is formed in the component region. The channel stopper region is formed by a photolithographic method that is carried out before a first photolithographic method for introducing dopants into a section of the component region outside the channel stopper region.Type: GrantFiled: December 20, 2018Date of Patent: March 9, 2021Assignee: Infineon Technologies AGInventors: Elmar Falck, Franz-Josef Niedernostheide, Hans-Joachim Schulze
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Publication number: 20200335579Abstract: A semiconductor device includes: a semiconductor body with an edge region arranged between an inner region and an edge surface; a first semiconductor region of a first doping type in the inner region; and a second semiconductor region of a second doping type in the inner and edge regions. An edge termination structure includes: a third semiconductor region in the edge region adjoining the first semiconductor region; a surface section of the second semiconductor region adjoining a first main surface of the semiconductor body; and an amorphous passivation layer having a specific resistance higher than 109 ?cm adjoining the third semiconductor region and the surface section. An electrically active doping dose of the third region at a lateral position spaced apart from the first region by 50% of a width of the edge termination structure is at least QBR/q, wherein QBR is breakdown charge and q is elementary charge.Type: ApplicationFiled: April 17, 2020Publication date: October 22, 2020Inventors: Gerhard Schmidt, Elmar Falck
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Patent number: 10497801Abstract: A method of manufacturing a semiconductor device includes forming a profile of net doping in a drift zone of a semiconductor body by multiple irradiations with protons and generating hydrogen-related donors by annealing the semiconductor body. At least 50% of a vertical extension of the drift zone between first and second sides of the semiconductor body is undulated and includes multiple doping peak values between 1×1013 cm?3 and 5×1014 cm?3.Type: GrantFiled: January 25, 2019Date of Patent: December 3, 2019Assignee: Infineon Technologies AGInventors: Elmar Falck, Andreas Haertl, Manfred Pfaffenlehner, Francisco Javier Santos Rodriguez, Daniel Schloegl, Hans-Joachim Schulze, Andre Stegner, Johannes Georg Laven
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Patent number: 10388722Abstract: A power semiconductor device is disclosed. In one example, the device comprises: a semiconductor body comprising a drift region, the drift region having dopants of a first conductivity type; an active region having at least one power cell; least partially into the semiconductor body; the at least one power cell being configured to conduct a load current between said terminals and to block a blocking voltage applied between said terminals; an edge that laterally terminates the semiconductor body; and a non-active termination structure arranged in between the edge and the active region. The termination structure comprises: at least one doped semiconductor region implemented in the semiconductor body; a conductor structure, and an ohmic path that electrically couples the conductor structure with an electrical potential of the first load terminal.Type: GrantFiled: October 12, 2017Date of Patent: August 20, 2019Assignee: Infineon Technologies AGInventors: Elmar Falck, Josef-Georg Bauer, Jens Brandenburg, Hans-Joachim Schulze
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Publication number: 20190237575Abstract: A semiconductor component includes a semiconductor body having opposing first surface and second surfaces, and a side surface surrounding the semiconductor body. The semiconductor component also includes an active region including a first semiconductor region of a first conductivity type, which is electrically contacted via the first surface, and a second semiconductor region of a second conductivity type, which is electrically contacted via the second surface. The semiconductor component further includes an edge termination region arranged in a lateral direction between the first semiconductor region of the active region and the side surface, and includes a first edge termination structure and a second edge termination structure. The second edge termination structure is arranged in the lateral direction between the first edge termination structure and the side surface and extends from the first surface in a vertical direction more deeply into the semiconductor body than the first edge termination structure.Type: ApplicationFiled: January 31, 2019Publication date: August 1, 2019Inventors: Anton Mauder, Hans-Joachim Schulze, Matteo Dainese, Elmar Falck, Franz-Josef Niedernostheide, Manfred Pfaffenlehner
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Publication number: 20190198610Abstract: A channel stopper region extending from a first main surface into a component layer of a first conductivity type is formed in an edge region of a component region, the edge region being adjacent to a sawing track region. Afterward, a doped region extending from the first main surface into the component layer is formed in the component region. The channel stopper region is formed by a photolithographic method that is carried out before a first photolithographic method for introducing dopants into a section of the component region outside the channel stopper region.Type: ApplicationFiled: December 20, 2018Publication date: June 27, 2019Inventors: Elmar Falck, Franz-Josef Niedernostheide, Hans-Joachim Schulze
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Publication number: 20190157435Abstract: A method of manufacturing a semiconductor device includes forming a profile of net doping in a drift zone of a semiconductor body by multiple irradiations with protons and generating hydrogen-related donors by annealing the semiconductor body. At least 50% of a vertical extension of the drift zone between first and second sides of the semiconductor body is undulated and includes multiple doping peak values between 1×1013 cm?3 and 5×1014 cm?3.Type: ApplicationFiled: January 25, 2019Publication date: May 23, 2019Inventors: Elmar Falck, Andreas Haertl, Manfred Pfaffenlehner, Francisco Javier Santos Rodriguez, Daniel Schloegl, Hans-Joachim Schulze, Andre Stegner, Johannes Georg Laven
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Patent number: 10211325Abstract: A semiconductor device includes a semiconductor body having opposite first and second sides. The semiconductor device further includes a drift zone in the semiconductor body between the second side and a pn junction. A profile of net doping of the drift zone along at least 50% of a vertical extension of the drift zone between the first and second sides is undulated and includes doping peak values between 1×1013 cm?3 and 5×1014 cm?3. A device blocking voltage Vbr is defined by a breakdown voltage of the pn junction between the drift zone and a semiconductor region of opposite conductivity type that is electrically coupled to the first side of the semiconductor body.Type: GrantFiled: January 28, 2014Date of Patent: February 19, 2019Assignee: Infineon Technologies AGInventors: Elmar Falck, Andreas Haertl, Manfred Pfaffenlehner, Francisco Javier Santos Rodriguez, Daniel Schloegl, Hans-Joachim Schulze, Andre Stegner, Johannes Georg Laven
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Patent number: 10049912Abstract: A method of manufacturing a semiconductor device includes forming a frame trench extending from a first surface into a base substrate, forming, in the frame trench, an edge termination structure comprising a glass structure, forming a conductive layer on the semiconductor substrate and the edge termination structure, and removing a portion of the conductive layer above the edge termination structure. A remnant portion of the conductive layer forms a conductive structure that covers a portion of the edge termination structure directly adjoining a sidewall of the frame trench.Type: GrantFiled: February 3, 2017Date of Patent: August 14, 2018Assignee: Infineon Technologies AGInventors: Alexander Breymesser, Andre Brockmeier, Elmar Falck, Francisco Javier Santos Rodriguez, Holger Schulze
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Patent number: 10038052Abstract: A vertical semiconductor device comprises a substrate having a front surface and a back surface, an active area (AA) located in the substrate, having a drift region doped with a first dopant type, an edge termination region (ER) laterally surrounding the active area (AA), a channelstopper terminal provided at the front surface and located in the edge termination region (ER), and a first suppression trench located on a side of the channelstopper terminal towards the active region (AA), and provided adjacent to the channelstopper terminal. Further, a production method for such a semiconductor device is provided.Type: GrantFiled: March 30, 2016Date of Patent: July 31, 2018Assignee: Infineon Technologies AGInventors: Elmar Falck, Frank Dieter Pfirsch, Hans-Joachim Schulze, Stephan Voss
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Publication number: 20180114841Abstract: A power semiconductor device is disclosed. In one example, the device comprises: a semiconductor body comprising a drift region, the drift region having dopants of a first conductivity type; an active region having at least one power cell; least partially into the semiconductor body; the at least one power cell being configured to conduct a load current between said terminals and to block a blocking voltage applied between said terminals; an edge that laterally terminates the semiconductor body; and a non-active termination structure arranged in between the edge and the active region. The termination structure comprises: at least one doped semiconductor region implemented in the semiconductor body; a conductor structure, and an ohmic path that electrically couples the conductor structure with an electrical potential of the first load terminal.Type: ApplicationFiled: October 12, 2017Publication date: April 26, 2018Applicant: Infineon Technologies AGInventors: Elmar Falck, Josef-Georg Bauer, Jens Brandenburg, Hans-Joachim Schulze
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Patent number: 9905634Abstract: A semiconductor device having a first load terminal, a second load terminal and a semiconductor body is presented. The semiconductor body comprises an active region configured to conduct a load current between the first load terminal and the second load terminal and a junction termination region surrounding the active region.Type: GrantFiled: June 21, 2016Date of Patent: February 27, 2018Assignee: Infineon Technologies Austria AGInventors: Andre Schwagmann, Elmar Falck, Hans-Joachim Schulze
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Publication number: 20170148663Abstract: A method of manufacturing a semiconductor device includes forming a frame trench extending from a first surface into a base substrate, forming, in the frame trench, an edge termination structure comprising a glass structure, forming a conductive layer on the semiconductor substrate and the edge termination structure, and removing a portion of the conductive layer above the edge termination structure. A remnant portion of the conductive layer forms a conductive structure that covers a portion of the edge termination structure directly adjoining a sidewall of the frame trench.Type: ApplicationFiled: February 3, 2017Publication date: May 25, 2017Inventors: Alexander Breymesser, Andre Brockmeier, Elmar Falck, Francisco Javier Santos Rodriguez, Holger Schulze
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Patent number: 9570542Abstract: A semiconductor device includes a semiconductor body with a first surface at a first side, a second surface opposite to the first surface and an edge surface connecting the first and second surfaces. An edge termination structure includes a glass structure and extends along the edge surface, at least from a plane coplanar with the first surface towards the second surface. A conductive structure extends parallel to the first surface and overlaps the glass structure at the first side.Type: GrantFiled: April 1, 2014Date of Patent: February 14, 2017Assignee: Infineon Technologies AGInventors: Alexander Breymesser, Andre Brockmeier, Elmar Falck, Francisco Javier Santos Rodriguez, Holger Schulze
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Publication number: 20170005163Abstract: A semiconductor device having a first load terminal, a second load terminal and a semiconductor body is presented. The semiconductor body comprises an active region configured to conduct a load current between the first load terminal and the second load terminal and a junction termination region surrounding the active region.Type: ApplicationFiled: June 21, 2016Publication date: January 5, 2017Inventors: Andre Schwagmann, Elmar Falck, Hans-Joachim Schulze
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Publication number: 20160293691Abstract: A vertical semiconductor device comprises a substrate having a front surface and a back surface, an active area (AA) located in the substrate, having a drift region doped with a first dopant type, an edge termination region (ER) laterally surrounding the active area (AA), a channelstopper terminal provided at the front surface and located in the edge termination region (ER), and a first suppression trench located on a side of the channelstopper terminal towards the active region (AA), and provided adjacent to the channelstopper terminal. Further, a production method for such a semiconductor device is provided.Type: ApplicationFiled: March 30, 2016Publication date: October 6, 2016Inventors: Elmar Falck, Frank Dieter Pfirsch, Hans-Joachim Schulze, Stephan Voss
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Patent number: 9385181Abstract: A semiconductor diode includes a semiconductor body having opposite first and second sides. A first and a second semiconductor region are consecutively arranged along a lateral direction at the second side. The first and second semiconductor regions are of opposite first and second conductivity types and are electrically coupled to an electrode at the second side. The semiconductor diode further includes a third semiconductor region of the second conductivity type buried in the semiconductor body at a distance from the second side. The second and third semiconductor regions are separated from each other.Type: GrantFiled: January 23, 2014Date of Patent: July 5, 2016Assignee: Infineon Technologies AGInventors: Hans Peter Felsl, Elmar Falck, Manfred Pfaffenlehner, Frank Hille, Andreas Haertl, Holger Schulze, Daniel Schloegl