Abstract: A a semiconductor component (1a, 1b) having a front side and an opposite rear side and also side surfaces, and also at least one emitter (2a, 2b) and at least one base (3a, 3b), wherein a pn junction (4a, 4b) is formed between emitter (2a, 2b) and base (3a, 3b) and the emitter (2a, 2b) extends parallel to the front and/or rear side. At least one side surface is a passivated separating surface (T), at which a separating surface passivation layer (6a, 6b) is arranged, which has stationary charges having a surface charge density at the separating surface (T) with a magnitude of greater than or equal to 1012 cm-2. A method for singulating a semiconductor component (1a, 1b) having a pn junction is also provided.

Abstract: A a semiconductor component (1a, 1b) having a front side and an opposite rear side and also side surfaces, and also at least one emitter (2a, 2b) and at least one base (3a, 3b), wherein a pn junction (4a, 4b) is formed between emitter (2a, 2b) and base (3a, 3b) and the emitter (2a, 2b) extends parallel to the front and/or rear side. At least one side surface is a passivated separating surface (T), at which a separating surface passivation layer (6a, 6b) is arranged, which has stationary charges having a surface charge density at the separating surface (T) with a magnitude of greater than or equal to 1012 cm-2. A method for singulating a semiconductor component (1a, 1b) having a pn junction is also provided.

Abstract: A semiconductor component having at least one emitter, at least one base, and a pn junction formed between emitter and base, having at least one non-metallic transverse conduction layer for the transverse conduction of majority charge carriers of the emitter. The emitter includes the transverse conduction layer and/or the transverse conduction layer is formed parallel to the emitter and in a manner electrically conductively connected thereto, and having a break side, at which the semiconductor component was singulated. A transverse conduction avoidance region is formed and arranged at the break side such that the transverse conductivity is reduced by at least a factor of 10, wherein the transverse conduction avoidance region has a depth (TQ) in the range of 5 ?m to 500 ?m, in particular 10 ?m to 200 ?m, perpendicular to the break side. A method for singulating a semiconductor component is also provided.

Abstract: A photovoltaic solar cell with a front face designed for coupling light, including at least one cutout (4) extending from the front face to the rear face in the semiconductor substrate (1) of a base doping type, at least one metal feedthrough structure (10), wherein the feedthrough structure (10) is guided in the cutout (4) from the front face to the rear face of the semiconductor substrate and is connected in an electrically conductive manner to the metal front face contact structure (9), which is connected in an electrically conductive manner to an emitter region (2) of the opposite doping to the base doping type, formed on the front face, and at least one rear face contact structure (7), which is connected to the feedthrough structure (10) in an electrically conductive manner and is arranged on the electrically insulating insulation layer (6) on the rear face and covers the isolation layer at least in the regions surrounding the recess (4), and therefore the rear face contact structure (7) is electrically