Patents by Inventor Elsa Hugonnard-Bruyere
Elsa Hugonnard-Bruyere has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8729629Abstract: A p-channel LDMOS device with a controlled n-type buried layer (NBL) is disclosed. A Shallow Trench Isolation (STI) oxidation is defined, partially or totally covering the drift region length. The NBL layer, which can be defined with the p-well mask, connects to the n-well diffusion, thus providing an evacuation path for electrons generated by impact ionization. High immunity to the Kirk effect is also achieved, resulting in a significantly improved safe-operating-area (SOA). The addition of the NBL deep inside the drift region supports a space-charge depletion region which increases the RESURF effectiveness, thus improving BV. An optimum NBL implanted dose can be set to ensure fully compensated charge balance among n and p doping in the drift region (charge balance conditions). The p-well implanted dose can be further increased to maintain a charge balance, which leads to an Rdson reduction.Type: GrantFiled: June 29, 2012Date of Patent: May 20, 2014Assignees: Atmel Rousset S.A.S., Laas-CNRSInventors: Willem-Jan Toren, Bruno Villard, Elsa Hugonnard-Bruyere, Gaetan Toulon, Frederic Morancho, Ignasi Cortes Mayol, Thierry Pedron
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Publication number: 20120267717Abstract: A p-channel LDMOS device with a controlled n-type buried layer (NBL) is disclosed. A Shallow Trench Isolation (STI) oxidation is defined, partially or totally covering the drift region length. The NBL layer, which can be defined with the p-well mask, connects to the n-well diffusion, thus providing an evacuation path for electrons generated by impact ionization. High immunity to the Kirk effect is also achieved, resulting in a significantly improved safe-operating-area (SOA). The addition of the NBL deep inside the drift region supports a space-charge depletion region which increases the RESURF effectiveness, thus improving BV. An optimum NBL implanted dose can be set to ensure fully compensated charge balance among n and p doping in the drift region (charge balance conditions). The p-well implanted dose can be further increased to maintain a charge balance, which leads to an Rdson reduction.Type: ApplicationFiled: June 29, 2012Publication date: October 25, 2012Applicants: LAAS-CNRS, ATMEL ROUSSET SASInventors: Willem-Jan Toren, Bruno Villard, Elsa Hugonnard-Bruyere, Gaetan Toulon, Frederic Morancho, Ignasi Cortes Mayol, Thierry Pedron
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Patent number: 8217452Abstract: A p-channel LDMOS device with a controlled n-type buried layer (NBL) is disclosed. A Shallow Trench Isolation (STI) oxidation is defined, partially or totally covering the drift region length. The NBL layer, which can be defined with the p-well mask, connects to the n-well diffusion, thus providing an evacuation path for electrons generated by impact ionization. High immunity to the Kirk effect is also achieved, resulting in a significantly improved safe-operating-area (SOA). The addition of the NBL deep inside the drift region supports a space-charge depletion region which increases the RESURF effectiveness, thus improving BV. An optimum NBL implanted dose can be set to ensure fully compensated charge balance among n and p doping in the drift region (charge balance conditions). The p-well implanted dose can be further increased to maintain a charge balance, which leads to an Rdson reduction.Type: GrantFiled: August 5, 2010Date of Patent: July 10, 2012Assignees: Atmel Rousset S.A.S., LAAS-CNREInventors: Willem-Jan Toren, Bruno Villard, Elsa Hugonnard-Bruyere, Gaetan Toulon, Frederic Morancho, Ignasi Cortes Mayol, Thierry Pedron
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Publication number: 20120032262Abstract: A p-channel LDMOS device with a controlled n-type buried layer (NBL) is disclosed. A Shallow Trench Isolation (STI) oxidation is defined, partially or totally covering the drift region length. The NBL layer, which can be defined with the p-well mask, connects to the n-well diffusion, thus providing an evacuation path for electrons generated by impact ionization. High immunity to the Kirk effect is also achieved, resulting in a significantly improved safe-operating-area (SOA). The addition of the NBL deep inside the drift region supports a space-charge depletion region which increases the RESURF effectiveness, thus improving BV. An optimum NBL implanted dose can be set to ensure fully compensated charge balance among n and p doping in the drift region (charge balance conditions). The p-well implanted dose can be further increased to maintain a charge balance, which leads to an Rdson reduction.Type: ApplicationFiled: August 5, 2010Publication date: February 9, 2012Applicants: LAAS-CNRS, ATMEL ROUSSET SASInventors: Willem-Jan Toren, Bruno Villard, Elsa Hugonnard-Bruyere, Gaetan Toulon, Frederic Morancho, Ignasi Cortes Mayol, Thierry Pedron
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Publication number: 20050282358Abstract: A method for transferring an electrically active thin film from an initial substrate to a target substrate including: ion implantation through one face of the initial substrate to create a buried, embrittled film at a determined depth relative to the implanted face of the initial substrate, thus delimiting a thin film between the implanted face and the buried face; fastening the implanted face of the initial substrate with a face of the target substrate; separating the thin film from the remainder of the initial substrate at the level of the buried film; and thinning down the thin film transferred on the target substrate. The implantation dosage, energy, and current are chosen, during the ion implantation, so that concentration in implantation defects is less than a determined threshold, resulting in, within the thinned down thin film, a number of acceptor defects compatible with desired electrical properties of the thin film.Type: ApplicationFiled: July 15, 2003Publication date: December 22, 2005Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE, S.O.I TEC SILICON ON INSULATOR TECHNOLOGIESInventors: Lea Di Cioccio, Fabrice Letertre, Elsa Hugonnard-Bruyere