Abstract: A field effect transistor device and method, such device having source and drain electrodes in ohmic contact a semiconductor. A gate electrode-field plate structure is disposed between the source and drain electrodes. The gate electrode-field plate structure comprises: a dielectric; a first metal in Schottky contact the semiconductor; and a second metal. The second metal has: a first portion disposed over and electrically connected to a portion of the first metal; and a second portion, separated from a second portion of the first metal by a portion of the dielectric and extending beyond an edge of the first metal to an edge of the second metal. The edge of the first metal is further from the drain electrode than the edge of the second metal to provide a field-plate for the field effect transistor.

Abstract: A field effect transistor device and method, such device having source and drain electrodes in ohmic contact a semiconductor. A gate electrode—field plate structure is disposed between the source and drain electrodes. The gate electrode—field plate structure comprises: a dielectric; a first metal in Schottky contact the semiconductor; and a second metal. The second metal has: a first portion disposed over and electrically connected to a portion of the first metal; and a second portion, separated from a second portion of the first metal by a portion of the dielectric and extending beyond an edge of the first metal to an edge of the second metal. The edge of the first metal is further from the drain electrode than the edge of the second metal to provide a field-plate for the field effect transistor.