Abstract: A power electronics module includes at least one first substrate having on a first side one or more first semiconductor dies, the one or more first semiconductor dies and the at least one first substrate providing a higher power part of the power electronics module, at least one second substrate having on a first side one or more second semiconductor dies, the one or more second semiconductor dies and the at least one second substrate providing a lower power part of the power electronics module, and a common frame at least partially encasing the first and second substrates and being a monobloc part, the higher power part being configured for direct liquid cooling and the lower power part being configured for indirect cooling.

Abstract: A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side of the MC. A side face of the MC has a stepped region between the high voltage lead and thicker leadframe part. A first generally vertical part of the stepped region extends from the high voltage lead to the generally horizontal part, a generally horizontal part of the stepped region extends to the second generally vertical part, and a second generally vertical part of the stepped region extends to the bottom side of the MC. A linear dimension of the generally horizontal part as measured from the first generally vertical part to the second generally vertical part is at least 4.5 mm.

Abstract: A power electronics module includes at least one first substrate having on a first side one or more first semiconductor dies, the one or more first semiconductor dies and the at least one first substrate providing a higher power part of the power electronics module, at least one second substrate having on a first side one or more second semiconductor dies, the one or more second semiconductor dies and the at least one second substrate providing a lower power part of the power electronics module, and a common frame at least partially encasing the first and second substrates and being a monobloc part, the higher power part being configured for direct liquid cooling and the lower power part being configured for indirect cooling.

Abstract: A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side of the MC. A side face of the MC has a stepped region between the high voltage lead and thicker leadframe part. A first generally vertical part of the stepped region extends from the high voltage lead to the generally horizontal part, a generally horizontal part of the stepped region extends to the second generally vertical part, and a second generally vertical part of the stepped region extends to the bottom side of the MC. A linear dimension of the generally horizontal part as measured from the first generally vertical part to the second generally vertical part is at least 4.5 mm.

Abstract: A power semiconductor module includes: a carrier; a plurality of semiconductor dies attached to a first side of the carrier and electrically connected to form a circuit or part of a circuit; a cooling device at a second side of the carrier opposite the first side; a clamping device attached to the cooling device and pressing the carrier toward the cooling device such that the second side of the carrier is in thermal contact with the cooling device without having an intervening base plate between the carrier and the cooling device; and a first sensor device embedded in the clamping device or attached to an interior surface of the clamping device.

Abstract: A method comprises producing a base plate, wherein producing the base plate comprises forming a layer of a metallic material, and forming at least one first area in the layer of metallic material, wherein forming the at least one first area either comprises locally deforming the layer of metallic material, or locally inducing stress into the layer of metallic material, or both such that a deflection or a local stress or both in the at least one first area differs from a deflection or a local stress or both of those areas of the metallic layer surrounding the at least one first area.