Abstract: An imaging spectroscopic ellipsometry apparatus and method configured to measure thin films with high spatial resolution. The apparatus includes a rotating compensator that enables to simultaneously collect both spectrometric ellipsometric data and ellipsometric imaging with the use of the same measurement beam of light. Collecting both data sets simultaneously increases the information content for analysis and affords a substantial increase in measurement performance.

Abstract: A spectroscopic ellipsometry system and method for thin film measurement with high spatial resolution. The system includes a rotating compensator so that spectroscopic ellipsometric and imaging ellipsometric data are collected simultaneously with the same measurement beam. Collecting both ellipsometric data sets simultaneously increases the information content for analysis and affords a substantial increase in measurement performance.

Abstract: An imaging spectropolarimeter configured to examine targets with polarized light, in which orientation of light-polarizing components is judiciously chosen to be target-specific and which employ a three-camera optical detection system defining an optical detection axis with respect to which individual camera analyzers are oriented in a specifically-defined fashion. Programmable electronic circuitry is adapted to substantially simultaneously acquire polarimetric images of the target utilizing intensity information collected by the multi-pixel sensors of the optical detection system.

Abstract: A spectroscopic ellipsometry system and method for thin film measurement with high spatial resolution. The system includes a rotating compensator so that spectroscopic ellipsometric and imaging ellipsometric data are collected simultaneously with the same measurement beam. Collecting both ellipsometric data sets simultaneously increases the information content for analysis and affords a substantial increase in measurement performance.

Abstract: An imaging spectropolarimeter for examining targets with polarized light, the spectropolarimeter including a light source adapted to produce polarized light directed at a target. Embodiments also include a three-camera camera system defining a three-camera camera axis with a first camera unit comprising a first analyzer set at 0°, a lens and a first multi-pixel sensor, a second camera unit comprising a second analyzer set at 45°, a lens and a second multi-pixel sensor, and a third camera unit comprising a third analyzer set at 90°, a lens and a third multi-pixel sensor. At least two beam splitters adapted to direct a portion of polarized light reflected from the target to each of the first, second and third camera units. Preferred systems include a processor adapted to produce polarimetric images of the target utilizing intensity information collected by the multi-pixel sensors.

Abstract: An imaging spectropolarimeter for examining targets with polarized light, the spectropolarimeter including a light source adapted to produce polarized light directed at a target. Embodiments also include a three-camera camera system defining a three-camera camera axis with a first camera unit comprising a first analyzer set at 0°, a lens and a first multi-pixel sensor, a second camera unit comprising a second analyzer set at 45°, a lens and a second multi-pixel sensor, and a third camera unit comprising a third analyzer set at 90°, a lens and a third multi-pixel sensor. At least two beam splitters adapted to direct a portion of polarized light reflected from the target to each of the first, second and third camera units. Preferred systems include a processor adapted to produce polarimetric images of the target utilizing intensity information collected by the multi-pixel sensors.

Abstract: An imaging spectropolarimeter for examining targets with polarized light, the spectropolarimeter including a light source adapted to produce polarized light directed at a target. Embodiments also include a three-camera camera system defining a three-camera camera axis with a first camera unit comprising a first analyzer set at 0°, a lens and a first multi-pixel sensor, a second camera unit comprising a second analyzer set at 45°, a lens and a second multi-pixel sensor, and a third camera unit comprising a third analyzer set at 90°, a lens and a third multi-pixel sensor. At least two beam splitters adapted to direct a portion of polarized light reflected from the target to each of the first, second and third camera units. Preferred systems include a processor adapted to produce polarimetric images of the target utilizing intensity information collected by the multi-pixel sensors.

Abstract: Metrology systems and methods that measure thin film thickness and or index of refraction of semiconductor wafers with at least one deposited or grown thin film layer. The present invention measures near normal incidence and grazing angle of incidence reflection (using reflected broadband UV, visible, and near infrared electromagnetic radiation) from a small region on a sample. Embodiments of the system selectively comprise a near-normal incidence spectrometer/ellipsometer, a high angle of incidence spectrometer/ellipsometer, or a combination of the two.

Abstract: Metrology systems and methods that measure thin film thickness and or index of refraction of semiconductor wafers with at least one deposited or grown thin film layer. The present invention measures near normal incidence and grazing angle of incidence reflection (using reflected broadband UV, visible, and near infrared electromagnetic radiation) from a small region on a sample. Embodiments of the system selectively comprise a near-normal incidence spectrometer/ellipsometer, a high angle of incidence spectrometer/ellipsometer, or a combination of the two.

Abstract: Metrology systems and methods that measure thin film thickness and or index of refraction of semiconductor wafers with at least one deposited or grown thin film layer. The present invention measures near normal incidence and grazing angle of incidence reflection (using reflected broadband UV, visible, and near infrared electromagnetic radiation) from a small region on a sample. Embodiments of the system selectively comprise a near-normal incidence spectrometer/ellipsometer, a high angle of incidence spectrometer/ellipsometer, or a combination of the two.

Abstract: Optical systems and methods that simultaneously measure optical constants (n, k) and thickness of thin films. The systems and methods use of differential polarimetry (differential analysis of spectroscopic multi-angle reflection and ellipsometric data) to measure optical constants (n k) and thickness of ultra-thin films.

Abstract: An optical technique (apparatus and method based on the use of power spectral density analysis of spectroscopic multiple angle reflection and transmission data is disclosed. The apparatus and methods measure optical constants (n, k) and thicknesses of single and multilayer films. The apparatus and method provide for index determination with high accuracy (0.00001).

Abstract: An optical technique (apparatus and method based on the use of power spectral density analysis of spectroscopic multiple angle reflection and transmission data is disclosed. The apparatus and methods measure optical constants (n, k) and thicknesses of single and multilayer films. The apparatus and method provide for index determination with high accuracy (0.00001).