Patents by Inventor Emanuel Cooper
Emanuel Cooper has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11781066Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.Type: GrantFiled: May 18, 2022Date of Patent: October 10, 2023Assignee: ENTEGRIS, INC.Inventors: YoungMin Kim, Michael White, Daniela White, Emanuel Cooper, Steven M. Bilodeau
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Patent number: 10651045Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.Type: GrantFiled: September 6, 2018Date of Patent: May 12, 2020Assignee: ENTEGRIS, INC.Inventors: Emanuel Cooper, Steven Bilodeau, Wen-Haw Dai, Min-Chieh Yang, Sheng-Hung Tu, Hsing-Chen Wu, Sean Kim, SeongJin Hong
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Patent number: 10340150Abstract: Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.Type: GrantFiled: December 16, 2014Date of Patent: July 2, 2019Assignee: Entegris, Inc.Inventors: Steven Bilodeau, Jeffrey A. Barnes, Emanuel Cooper, Hsing-Chen Wu, Sheng-Hung Tu, Thomas Parson, Min-chieh Yang
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Publication number: 20190074188Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.Type: ApplicationFiled: September 6, 2018Publication date: March 7, 2019Inventors: Emanuel Cooper, Steven Bilodeau, Wen-Haw Dai, Min-Chieh Yang, Sheng-Hung Tu, Hsing-Chen Wu, Sean Kim, SeongJin Hong
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Publication number: 20170096624Abstract: An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: ApplicationFiled: December 19, 2016Publication date: April 6, 2017Inventors: David Angst, Peng Zhang, Jeffrey Barnes, Prema Sonthalia, Emanuel Cooper, Karl Boggs
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Patent number: 9528078Abstract: An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: GrantFiled: March 25, 2014Date of Patent: December 27, 2016Assignee: Advanced Technology Materials, Inc.Inventors: David Angst, Peng Zhang, Jeffrey Barnes, Prerna Sonthalia, Emanuel Cooper, Karl Boggs
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Publication number: 20160314990Abstract: Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.Type: ApplicationFiled: December 16, 2014Publication date: October 27, 2016Applicants: ENTEGRIS, INC., ATMI TAIWAN CO., LTD.Inventors: Steven BILODEAU, Jeffrey A. BARNES, Emanuel COOPER, Hsing-Chen WU, Sheng-Hung TU, Thomas PARSON, Min-chieh YANG
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Publication number: 20140206588Abstract: An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: ApplicationFiled: March 25, 2014Publication date: July 24, 2014Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: David Angst, Peng Zhang, Jeffrey Barnes, Prerna Sonthalia, Emanuel Cooper, Karl Boggs
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Patent number: 8685909Abstract: An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: GrantFiled: March 23, 2009Date of Patent: April 1, 2014Assignee: Advanced Technology Materials, Inc.Inventors: David Angst, Peng Zhang, Jeffrey Barnes, Prerna Sonthalia, Emanuel Cooper, Karl Boggs
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Patent number: 8026200Abstract: A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).Type: GrantFiled: May 1, 2009Date of Patent: September 27, 2011Assignees: Advanced Technology Materials, Inc., International Business Machines Corp.Inventors: Emanuel Cooper, Julie Cissell, Renjie Zhou, Michael B. Korzenski, George G. Totir, Mahmoud Khojasteh
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Publication number: 20110039747Abstract: A method and mineral acid-containing compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The mineral acid-containing composition includes at least one mineral acid, at least one sulfur-containing oxidizing agent, and optionally at least one metal ion-containing catalyst. The mineral acid-containing compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).Type: ApplicationFiled: August 20, 2008Publication date: February 17, 2011Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Renjie Zhou, Emanuel Cooper, Michael B. Korzenski, Ping Jiang
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Publication number: 20100219078Abstract: A plating apparatus securely carries out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.Type: ApplicationFiled: April 30, 2010Publication date: September 2, 2010Inventors: Keiichi KURASHINA, Mizuki Nagai, Satoru Yamamoto, Hiroyuki Kanda, Koji Mishima, Shinya Morisawa, Junji Kunisawa, Kunihito Ide, Hidenao Suzuki, Emanuel Cooper, Philippe Vereecken, Brett Baker-O'Neal, Hariklia Deligianni
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Patent number: 7736474Abstract: A plating apparatus securely carries out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.Type: GrantFiled: October 7, 2005Date of Patent: June 15, 2010Assignees: Ebara Corporation, International Business Machines CorporationInventors: Keiichi Kurashina, Mizuki Nagai, Satoru Yamamoto, Hiroyuki Kanda, Koji Mishima, Shinya Morisawa, Junji Kunisawa, Kunihito Ide, Hidenao Suzuki, Emanuel Cooper, Philippe Vereecken, Brett Baker-O'Neal, Hariklia Deligianni
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Publication number: 20090281016Abstract: A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).Type: ApplicationFiled: May 1, 2009Publication date: November 12, 2009Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Emanuel Cooper, Julie Cissell, Renjie Zhou, Michael B. Korzenski, George G. Totir, Mahmoud Khojasteh
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Publication number: 20090239777Abstract: An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: ApplicationFiled: March 23, 2009Publication date: September 24, 2009Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: David Angst, Peng Zhang, Jeffrey Barnes, Prerna Sonthalia, Emanuel Cooper, Karl Boggs
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Patent number: 7193323Abstract: A composite material comprising a layer containing copper, and an electrodeposited CoWP film on the copper layer. The CoWP film contains from 11 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a method of making an interconnect structure comprising: providing a trench or via within a dielectric material, and a conducting metal containing copper within the trench or the via; and forming a CoWP film by electrodeposition on the copper layer. The CoWP film contains from 10 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a interconnect structure comprising a dielectric layer in contact with a metal layer; an electrodeposited CoWP film on the metal layer, and a copper layer on the CoWP film.Type: GrantFiled: November 18, 2003Date of Patent: March 20, 2007Assignee: International Business Machines CorporationInventors: Cyril Cabral, Jr., Stefanie R. Chiras, Emanuel Cooper, Hariklia Deligianni, Andrew J. Kellock, Judith M. Rubino, Roger Y. Tsai
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Publication number: 20070034525Abstract: An electrolytic processing method is used to remove a metal film formed on a surface of a substrate. The electrolytic processing method includes providing a feeding electrode 31 and a processing electrode 32 on a table 12, providing an insulating member 36 between the feeding electrode and the processing electrode, holding the substrate W by a substrate carrier 11, bringing the substrate into contact with the insulating member, supplying first and second electrolytic processing liquids to gaps between the feeding electrode and the substrate and between the processing electrode and the substrate, respectively, while the first and second electrolytic processing liquids are electrically isolated, applying voltage between the feeding electrode and the processing electrode, and making a relative movement between the substrate carrier and the table to electrically process the metal film.Type: ApplicationFiled: August 12, 2005Publication date: February 15, 2007Inventors: Masayuki Kumekawa, Norio Kimura, Yukio Fukunaga, Katsuyuki Musaka, Hariklia Deligianni, Emanuel Cooper, Philippe Vereecken
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Publication number: 20070034526Abstract: An electrolytic processing apparatus can planarize uniformly over an entire surface of a substrate under a low pressure without any damages to the substrate. The electrolytic processing apparatus has a substrate holder configured to hold and rotate a substrate having a metal film formed on a surface of the substrate and an electrolytic processing unit configured to perform an electrolytic process on the substrate held by the substrate holder. The electrolytic processing unit has a rotatable processing electrode, a polishing pad attached to the rotatable processing electrode, and a pressing mechanism configured to press the polishing pad against the substrate.Type: ApplicationFiled: August 12, 2005Publication date: February 15, 2007Inventors: Natsuki Makino, Junji Kunisawa, Keisuke Namiki, Yukio Fukunaga, Katsuyuki Musaka, Ray Fang, Emanuel Cooper, John Cotte, Hariklia Deligianni, Keith Kwietniak, Brett Baker-O'Neal, Matteo Flotta, Philippe Vereecken
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Publication number: 20060283709Abstract: Various counter-electrodes for electroplating, electrodeposition or anodizing of substrates are disclosed. According to certain embodiments, multi-segmented counter-electrodes are provided. According to additional embodiments, counter-electrodes having concave or convex top surfaces are provided. The disclosed counter-electrodes enable greater control over electrodeposition, electroetching and anodizing processes for resistive substrates, as well as more uniform plating and etching of resistive substrates. Methods for electroplating, electrodeposition or anodizing of resistive substrates using multi-segmented counter-electrodes are also provided.Type: ApplicationFiled: June 20, 2005Publication date: December 21, 2006Applicant: International Business Machines CorporationInventors: Panayotis Andricacos, Emanuel Cooper, John Cotte, Hariklia Deligianni, Caliopo Andricacos
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Patent number: RE46427Abstract: An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: GrantFiled: January 13, 2015Date of Patent: June 6, 2017Assignee: Entegris, Inc.Inventors: David Angst, Peng Zhang, Jeffrey Barnes, Prerna Sonthalia, Emanuel Cooper, Karl Boggs