Patents by Inventor Emanuel I. Cooper

Emanuel I. Cooper has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Aqueous and semi-aqueous cleaners for the removal of post-etch residues with tungsten and cobalt compatibility
    Patent number: 11978622
    Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: May 7, 2024
    Assignee: ENTEGRIS, INC.
    Inventors: Lingyan Song, Steven Lippy, Emanuel I. Cooper
  • Method for removing hard masks
    Patent number: 11788007
    Abstract: Provided are compositions and methods useful in etching, i.e., removing amorphous carbon hard masks which have been doped with elements such as boron, chlorine, or nitrogen. The compositions utilize concentrated sulfuric acid, water, and at least one oxidizing agent. In the operation of the method, the composition selectively removes the doped hard mask layer, even in the presence of layers such as silicon dioxide, silicon nitride, tantalum nitride, and polysilicon, with good selectivity.
    Type: Grant
    Filed: July 30, 2021
    Date of Patent: October 17, 2023
    Assignee: ENTEGRIS, INC.
    Inventors: Hsing-Chen Wu, Emanuel I. Cooper, Min-Chieh Yang
  • SILICON NITRIDE ETCHING COMPOSITION AND METHOD
    Publication number: 20230295502
    Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.
    Type: Application
    Filed: May 24, 2023
    Publication date: September 21, 2023
    Inventors: Steven Michael BILODEAU, SeongJin HONG, Hsing-Chen WU, Min-Chieh YANG, Emanuel I. COOPER
  • Silicon nitride etching composition and method
    Patent number: 11697767
    Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.
    Type: Grant
    Filed: June 7, 2021
    Date of Patent: July 11, 2023
    Assignee: ENTEGRIS, INC.
    Inventors: Steven Michael Bilodeau, SeongJin Hong, Hsing-Chen Wu, Min-Chieh Yang, Emanuel I. Cooper
  • METHOD AND COMPOSITION FOR ETCHING MOLYBDENUM
    Publication number: 20230030323
    Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 ?/min.
    Type: Application
    Filed: September 21, 2022
    Publication date: February 2, 2023
    Inventors: Atanu K. Das, Daniela White, Emanuel I. Cooper, Eric Hong, JeongYeol Yang, Juhee Yeo, Michael L. White, SeongJin Hong, SeungHyun Chae, Steven A. Lippy, WonLae Kim
  • Compositions and methods for selectively etching silicon nitride films
    Patent number: 11530356
    Abstract: Provided are wet etching compositions and methods for etching a surface of a microelectronic device that contains silicon nitride (SiN), silicon oxide, and polysilicon which in one embodiment is in contact with a surface comprising a compound which is electrochemically more noble than silicon, and optionally other materials which may include a conductive material, a semiconducting material, or an insulating material useful in a microelectronic device, or a processing material that is useful in preparing a microelectronic device.
    Type: Grant
    Filed: July 29, 2021
    Date of Patent: December 20, 2022
    Assignee: ENTEGRIS, INC.
    Inventors: Steven M. Bilodeau, Emanuel I. Cooper, Daniela White
  • Method and composition for etching molybdenum
    Patent number: 11492709
    Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 ?/min.
    Type: Grant
    Filed: April 14, 2021
    Date of Patent: November 8, 2022
    Assignee: ENTEGRIS, INC.
    Inventors: Atanu K. Das, Daniela White, Emanuel I. Cooper, Eric Hong, JeongYeol Yang, Juhee Yeo, Michael L. White, SeongJin Hong, SeungHyun Chae, Steven A. Lippy, WonLae Kim
  • CLEANING COMPOSITION
    Publication number: 20220336210
    Abstract: Provided are compositions useful for the cleaning of microelectronic device structures. The residues may include post-CMP, post-etch, post-ash residues, pad and brush debris, metal and metal oxide particles and precipitated metal organic complexes such as copper-benzotriazole complexes. Advantageously, the compositions as described herein show improved aluminum, cobalt, and copper compatibility.
    Type: Application
    Filed: April 14, 2022
    Publication date: October 20, 2022
    Inventors: Jun Liu, Michael L. White, Daniela White, Emanuel I. Cooper
  • WET ETCHING COMPOSITION AND METHOD
    Publication number: 20220275276
    Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.
    Type: Application
    Filed: May 18, 2022
    Publication date: September 1, 2022
    Inventors: YoungMin Kim, Michael White, Daniela White, Emanuel I. Cooper, Steven M. Bilodeau
  • Wet etching composition and method
    Patent number: 11365351
    Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.
    Type: Grant
    Filed: October 8, 2020
    Date of Patent: June 21, 2022
    Assignee: ENTEGRIS, INC.
    Inventors: YoungMin Kim, Michael White, Daniela White, Emanuel I. Cooper, Steven M. Bilodeau
  • Ruthenium etching composition and method
    Patent number: 11346008
    Abstract: The invention provides compositions useful for selectively etching ruthenium and/or copper. The compositions comprise certain periodate compounds, alkylammonium or alkylphosphonium hydroxides, carbonate or bicarbonate buffers, and water, wherein the pH of the composition is about 9 to about 12.5. The compositions of the invention are effectively utilized in the method of the invention and have been found to be capable of etching Cu and Ru at similar rates, i.e., >20 ?/min, while minimizing etch rates of dielectrics (<2 ?/min).
    Type: Grant
    Filed: November 22, 2019
    Date of Patent: May 31, 2022
    Assignee: ENTEGRIS, INC.
    Inventors: Steven Lippy, Emanuel I. Cooper
  • METHOD FOR REMOVING HARD MASKS
    Publication number: 20220033709
    Abstract: Provided are compositions and methods useful in etching, i.e., removing amorphous carbon hard masks which have been doped with elements such as boron, chlorine, or nitrogen. The compositions utilize concentrated sulfuric acid, water, and at least one oxidizing agent. In the operation of the method, the composition selectively removes the doped hard mask layer, even in the presence of layers such as silicon dioxide, silicon nitride, tantalum nitride, and polysilicon, with good selectivity.
    Type: Application
    Filed: July 30, 2021
    Publication date: February 3, 2022
    Inventors: Hsing-Chen WU, Emanuel I. COOPER, Min-Chieh YANG
  • COMPOSITIONS AND METHODS FOR SELECTIVELY ETCHING SILICON NITRIDE FILMS
    Publication number: 20220033710
    Abstract: Provided are wet etching compositions and methods for etching a surface of a microelectronic device that contains silicon nitride (SiN), silicon oxide, and polysilicon which in one embodiment is in contact with a surface comprising a compound which is electrochemically more noble than silicon, and optionally other materials which may include a conductive material, a semiconducting material, or an insulating material useful in a microelectronic device, or a processing material that is useful in preparing a microelectronic device.
    Type: Application
    Filed: July 29, 2021
    Publication date: February 3, 2022
    Inventors: Steven M. BILODEAU, Emanuel I. COOPER, Daniela WHITE
  • Compositions and methods for removing ceria particles from a surface
    Patent number: 11164738
    Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: November 2, 2021
    Assignee: Entegris, Inc.
    Inventors: Daniela White, Thomas Parson, Michael White, Emanuel I. Cooper, Atanu Das
  • METHOD AND COMPOSITION FOR ETCHING MOLYBDENUM
    Publication number: 20210324525
    Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 ?/min.
    Type: Application
    Filed: April 14, 2021
    Publication date: October 21, 2021
    Inventors: Atanu K. DAS, Daniela WHITE, Emanuel I. COOPER, Eric HONG, JeongYeol YANG, Juhee YEO, Michael L. WHITE, SeongJin HONG, SeungHyun CHAE, Steven A. LIPPY, WonLae KIM
  • SILICON NITRIDE ETCHING COMPOSITION AND METHOD
    Publication number: 20210296136
    Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.
    Type: Application
    Filed: June 7, 2021
    Publication date: September 23, 2021
    Inventors: Steven Michael BILODEAU, SeongJin HONG, Hsing-Chen WU, Min-Chieh YANG, Emanuel I. COOPER
  • Silicon nitride etching composition and method
    Patent number: 11053440
    Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.
    Type: Grant
    Filed: November 12, 2019
    Date of Patent: July 6, 2021
    Assignee: ENTEGRIS, INC.
    Inventors: Steven M. Bilodeau, SeongJin Hong, Hsing-Chen Wu, Min-Chieh Yang, Emanuel I. Cooper
  • Composition and process for selectively etching p-doped polysilicon relative to silicon nitride
    Patent number: 10991809
    Abstract: A removal composition and process for selectively removing p-doped polysilicon (e.g., boron-doped polysilicon) relative to silicon nitride from a microelectronic device having said material thereon. The substrate preferably comprises a high-k/metal gate integration scheme.
    Type: Grant
    Filed: November 22, 2016
    Date of Patent: April 27, 2021
    Assignee: ENTEGRIS, INC.
    Inventors: Steven Bilodeau, Emanuel I Cooper
  • WET ETCHING COMPOSITION AND METHOD
    Publication number: 20210108140
    Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.
    Type: Application
    Filed: October 8, 2020
    Publication date: April 15, 2021
    Inventors: YoungMin KIM, Michael WHITE, Daniela WHITE, Emanuel I. COOPER, Steven M. BILODEAU
  • Formulations to selectively etch silicon germanium relative to germanium
    Patent number: 10957547
    Abstract: Compositions useful for the selective removal of silicon germanium materials relative to germanium-containing materials and silicon-containing materials from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required SiGe:Ge removal selectivity and etch rates.
    Type: Grant
    Filed: July 7, 2016
    Date of Patent: March 23, 2021
    Assignee: ENTEGRIS, INC.
    Inventors: Steven Bilodeau, Emanuel I. Cooper