Abstract: An image sensor includes an array of readout circuits in non-organic technology and photodiodes made of organic materials.

Abstract: An image sensor includes an array of readout circuits in non-organic technology and photodiodes made of organic materials.

Abstract: A formulation for preparing organic electronic devices, has: a p-type organic semiconductor polymer including a conjugated aryl polymer, a conjugated heteroaryl compound, or a mixture of at least two of these compounds; an n-type semiconductor material including fullerene, substituted fullerene, or a mixture of at least two of these compounds; and a non-aqueous solvent. The concentration of the p-type organic semiconductor polymer is in the range from 4 mg/mL to 8 mg/mL per milliliter of solvent and the concentration of the p-type organic semiconductor material is in the range from 10 mg/mL to 14 mg/mL per milliliter of solvent.

Abstract: A formulation for preparing organic electronic devices, has: a p-type organic semiconductor polymer including a conjugated aryl compound, a conjugated heteroaryl compound, or a mixture of at least two of these compounds; an n-type semiconductor material having fullerene, substituted fullerene, or a mixture of at least two of these compounds; and a non-aqueous solvent. The concentration of the p-type organic semiconductor polymer is in the range from 12 mg/mL to 17 mg/mL per milliliter of solvent and the concentration of the p-type organic semiconductor material is in the range from 24 mg/mL to 28 mg/mL per milliliter of solvent.

Abstract: A formulation for preparing organic electronic devices, has: a p-type organic semiconductor polymer including a conjugated aryl polymer, a conjugated heteroaryl compound or a mixture of at least two of these compounds; an n-type semiconductor material including fullerene, substituted fullerene, or a mixture of at least two of these compounds; and a non-aqueous solvent. The concentration of the p-type organic semiconductor polymer is in the range from 8 mg/mL to 12 mg/mL per milliliter of solvent and the concentration of the p-type organic semiconductor material is in the range from 18 mg/mL to 22 mg/mL per milliliter of solvent.

Abstract: A pixel includes at least one organic light-emitting component including a first hole injection layer; and at least one organic photodetector, including a second hole injection layer. The first and second hole injection layers are made of a same material.

Abstract: An angular filter for an image sensor includes opaque resin patterns at least partially covered with a first humidity-tight layer.

Abstract: A method of manufacturing an optoelectronic device that includes an optical sensor with organic photodiodes capable of capturing a radiation, the optical sensor covering an electronic circuit with MOS transistors. The method includes forming, on the optical sensor, on the side of the optical sensor opposite to the electronic device, a first layer transparent to the radiation, the first layer having a planar surface on the side opposite to the optical sensor; and forming a second layer on the surface, the second layer being oxygen- and water-tight.

Abstract: An ink includes a first non-aqueous solvent and a polymer selected from among a polyethylenimine, an ethoxylated polyethylenimine, a perfluoroanthracene, and one or a plurality of conjugated thiols.

Abstract: A formulation for preparing organic electronic devices, has: a p-type organic semiconductor material, an n-type semiconductor material, and a non-aqueous solvent. The concentration of the p-type organic semiconductor material is in the range from 4 mg/mL to 25 mg/mL per milliliter of solvent and the proportion between the p-type organic semiconductor material and the n-type organic semiconductor material varies from 1:1 to 1:2 by weight.

Abstract: A method of manufacturing an optoelectronic device includes the successive steps of forming on a support first and second electrically-conductive pads; depositing an active organic layer covering the first and second electrically-conductive pads; depositing a first interface layer on the active organic layer in contact with the active organic layer; forming a first opening in the first interface layer and a second opening in the active organic layer in line with the first opening, to expose the second electrically-conductive pad; and forming a second interface layer at least partly extending in the first and second openings. The second interface layer is in contact with the first interface layer and with the second electrically-conductive pad.

Abstract: An image sensor includes an array of readout circuits in non-organic technology and photodiodes made of organic materials.

Abstract: A device for detecting an electromagnetic radiation has at least one photodetector including an organic diode and an organic photodiode formed in a same stack of semiconductor layers, the organic photodiode receiving the radiation. The photodetector further includes at least one screen which is opaque to the radiation and screens the portion of the stack corresponding to the diode.

Abstract: An optoelectronic device includes a display screen and an image sensor. The display screen includes a matrix of organic light-emitting components connected to first transistors and the image sensor includes a matrix of organic photodetectors connected to second transistors. The resolution of the optoelectronic device for the light-emitting components is greater than 300 ppi and the resolution of the optoelectronic device for the photodetectors is greater than 300 ppi. The total thickness of the optoelectronic device is less than 2 mm.

Abstract: A device for detecting an electromagnetic radiation has at least one photodetector including an organic diode and an organic photodiode formed in a same stack of semiconductor layers, the organic photodiode receiving the radiation. The photodetector further includes at least one screen which is opaque to the radiation and screens the portion of the stack corresponding to the diode.

Abstract: A method for manufacturing a device comprising a structure with nanowires based on a semiconducting material such as Si and another structure with nanowires based on another semiconducting material such as SiGe, and is notably applied to the manufacturing of transistors.

Abstract: The substrate comprises a first silicon layer, a target layer made from silicon-germanium alloy-base material forming a three-dimensional pattern with first and second securing areas and at least one connecting area. The first silicon layer is tensile stressed and/or the target layer contains carbon atoms. The first silicon layer is eliminated in the connecting area. The target layer of the connecting area is thermally oxidized so as to form the nanowire. The lattice parameter of the first silicon layer is identical to the lattice parameter of the material constituting the suspended beam, after said first silicon layer has been eliminated.

Abstract: The invention relates to a method for manufacturing a device comprising a structure with nanowires based on a semiconducting material such as Si and another structure with nanowires based on another semiconducting material such as SiGe, and is notably applied to the manufacturing of transistors.

Abstract: The substrate comprises a first silicon layer, a target layer made from silicon-germanium alloy-base material forming a three-dimensional pattern with first and second securing areas and at least one connecting area. The first silicon layer is tensile stressed and/or the target layer contains carbon atoms. The first silicon layer is eliminated in the connecting area. The target layer of the connecting area is thermally oxidized so as to form the nanowire. The lattice parameter of the first silicon layer is identical to the lattice parameter of the material constituting the suspended beam, after said first silicon layer has been eliminated.