Abstract: It is the purpose of the present invention to prevent a macroscopic defect in the production of an SiC single crystal. SiC source material powder and an SiC seed crystal are disposed inside a graphite crucible, and the SiC source material powder is thermally sublimated and recrystallized on a front surface of the SiC seed crystal to grow an SiC single crystal. In this sublimation-recrystallization method, a protection layer is provided on a back surface of the SiC seed crystal. The SiC seed crystal is mechanically supported by a supporting part disposed on the graphite crucible without bonding. Thereby, it is possible to improve the thermal maldistribution on the back surface of the SiC seed crystal and possible to suppress damage of the protection layer due to the thermal maldistribution. Thus, macroscopic defects in the grown SiC single crystal are preferably suppressed.

Abstract: A crucible for growing a single crystal therein has a seed crystal attachment portion and a peripheral portion surrounding the seed crystal attachment portion through a gap provided therebetween. The seed crystal attachment portion has a support surface for holding a seed crystal on which the single crystal is to be grown, and the support surface is recessed from a surface of the peripheral portion. The seed crystal is attached to the support surface to cover an entire area of the support surface. Accordingly, no poly crystal is formed on the seed crystal attachment portion, and the single crystal can be grown on the seed crystal with high quality.

Abstract: A silicon carbide single crystal substrate and silicon carbide raw material powder are provided in a graphite vessel. Arsenic or an arsenic compound is added to the silicon carbide raw material powder. A mixed gas obtained by mixing a gas containing arsenic with a raw material gas formed by heat sublimation of the silicon carbide raw material powder is supplied to the silicon carbide single crystal substrate to grow a silicon carbide single crystal containing arsenic. Arsenic as an n-type dopant controls the resistivity of the silicon carbide single crystal. Because it has an atomic radius equivalent to silicon, it does not compress or expand the crystal, whereby crystalline distortion is less likely to occur. As a result, formation of heterogeneous polymorphism is suppressed.

Abstract: It is the purpose of the present invention to prevent a macroscopic defect in the production of an SiC single crystal. SiC source material powder and an SiC seed crystal are disposed inside a graphite crucible, and the SiC source material powder is thermally sublimated and recrystallized on a front surface of the SiC seed crystal to grow an SiC single crystal. In this sublimation-recrystallization method, a protection layer is provided on a back surface of the SiC seed crystal. The SiC seed crystal is mechanically supported by a supporting part disposed on the graphite crucible without bonding. Thereby, it is possible to improve the thermal maldistribution on the back surface of the SiC seed crystal and possible to suppress damage of the protection layer due to the thermal maldistribution. Thus, macroscopic defects in the grown SiC single crystal are preferably suppressed.