Patents by Inventor Emiel Andreas Godefridus Peeters

Emiel Andreas Godefridus Peeters has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9372399
    Abstract: An imprint lithography method is disclosed for reducing a difference between an intended topography and an actual topography arising from a part of a patterned layer of fixed imprintable medium. The method involves imprinting an imprint lithography template into a layer of flowable imprintable medium to form a patterned layer in the imprintable medium, and fixing the imprintable medium to form a patterned layer of fixed imprintable medium. Local excitation is applied to the part of the patterned layer to adjust a chemical reaction in the part of the patterned layer to reduce the difference between the intended topography and the actual topography arising from the part of the fixed patterned layer of imprintable medium when this is subsequently used as a resist for patterning the substrate. An imprint medium suitable for imprint lithography with the method is also disclosed.
    Type: Grant
    Filed: July 21, 2011
    Date of Patent: June 21, 2016
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Martinus Bernardus Van Der Mark, Vadim Yevgenyevich Banine, Andre Bernardus Jeunink, Johan Frederik Dijksman, Sander Frederik Wuister, Emiel Andreas Godefridus Peeters, Johan Hendrik Klootwijk, Roelof Koole, Christianus Martinus Van Heesch, Ruediger Guenter Mauczok, Jacobus Bernardus Giesbers
  • Publication number: 20130120725
    Abstract: An imprint lithography method is disclosed for reducing a difference between an intended topography and an actual topography arising from a part of a patterned layer of fixed imprintable medium. The method involves imprinting an imprint lithography template into a layer of flowable imprintable medium to form a patterned layer in the imprintable medium, and fixing the imprintable medium to form a patterned layer of fixed imprintable medium. Local excitation is applied to the part of the patterned layer to adjust a chemical reaction in the part of the patterned layer to reduce the difference between the intended topography and the actual topography arising from the part of the fixed patterned layer of imprintable medium when this is subsequently used as a resist for patterning the substrate. An imprint medium suitable for imprint lithography with the method is also disclosed.
    Type: Application
    Filed: July 21, 2011
    Publication date: May 16, 2013
    Applicant: ASML Netherlands B.V.
    Inventors: Martinus Bernardus Van Der Mark, Vadim Yevgenyevich Banine, Andre Bernardus Jeunink, Johan Frederik Dijksman, Sander Frederik Wuister, Emiel Andreas Godefridus Peeters, Johan Hendrik Klootwijk, Roelof Koole, Christianus Martinus Van Heesch, Ruediger Guenter Mauczok, JAcobus Bernardus Giesbers