Abstract: A semiconductor device includes a semiconductor layer, a conductive film, a first insulating film, and a second insulating film. The semiconductor layer has an element region where a semiconductor element is provided and a termination region surrounding the element region. The conductive film is provided on the element region and the termination region. The first insulating film is provided on the conductive film on the termination region and a portion of the element region adjacent to the termination region. The second insulating film that is lower in resistivity than the first insulating film, and higher in resistivity than the conductive film, is provided on the first insulating film.

Abstract: A semiconductor device includes a silicon substrate, a first layer, a second layer, a barrier metal, and a gate pad. The first layer is formed of an oxide film provided on an upper surface of the silicon substrate. The second layer is a layer at least selectively having a projecting and recessed part on an upper surface of the first layer, the projecting and recessed part having a projection and recess deeper than a projection and recess occurring when the layer is formed in a planar shape. The barrier metal is formed on an upper surface of the second layer according to a shape of the projecting and recessed part. The gate pad is in close contact with the silicon substrate via the barrier metal.

Abstract: A semiconductor apparatus according to the present embodiment is a semiconductor apparatus including a first nitride semiconductor layer including a first region having a first upper surface, a second region having a second upper surface parallel to the first upper surface, and a third region provided between the first region and the second region and having a third upper surface inclined with respect to the first upper surface and the second upper surface; a second nitride semiconductor layer including a fourth upper surface provided above the first upper surface, a fifth upper surface provided above the second upper surface, and a sixth upper surface provided above the third upper surface and being parallel to the third upper surface, the fourth upper surface being parallel to the first upper surface and being a +c face, the fifth upper surface parallel to the second upper surface and being a +c face, and the second nitride semiconductor having a bandgap larger than that of the first nitride semiconductor l

Abstract: An elastically stretchable nonwoven fabric including thermoplastic elastomer filaments; the filaments being heat-sealed and/or mechanically intertwined together to form the nonwoven fabric that has crimped regions and non-crimped regions wherein each of the crimped regions has fine crimps in the rate of 50/cm or higher.

Abstract: An elastically stretchable nonwoven fabric including thermoplastic elastomer filaments; the filaments being heat-sealed and/or mechanically intertwined together to form the nonwoven fabric that has crimped regions and non-crimped regions wherein each of the crimped regions has fine crimps in the rate of 50/cm or higher.

Abstract: A wet tissue container (10) includes a container body (11), a lid (23) supported for turning on the container body (11) and a bottom wall (12) hermetically closing the open lower end of the container body (11). A rubber plate (50) is extended between the container body (11) and the lid (23). The wet tissue container (10) is held by a container holder (1). The container holder (1) has a back part (2) on which the bottom wall (12) is seated, guide parts (3, 4) of an L-shaped cross section that engage edge parts (12a, 12b) of the bottom wall (12) and edge parts (14a, 14b) of a flange (14) formed on the container body (11). A support part (5) to be inserted in a slot formed in a toilet paper holder (7) is connected to the back part (2).

Abstract: An elastically stretchable nonwoven fabric including thermoplastic elastomer filaments; the filaments being heat-sealed and/or mechanically intertwined together to form the nonwoven fabric that has crimped regions and non-crimped regions wherein each of the crimped regions has fine crimps in the rate of 50/cm or higher.