Abstract: A vehicle armrest includes an opening/closing body, a switch knob and an operation transmission mechanism. The opening/closing body opens and closes an upper side of a storage section. The switch knob is configured to open the opening/closing body. The operation transmission mechanism opens the opening/closing body in response to an operation of the switch knob. The opening/closing body includes an inner base portion and an outer lid portion. The outer lid portion is movably connected to the base portion to move forward and rearward in a front-rear direction. The switch knob is disposed in a fixed position in a main box body farther forward than the front end of the opening/closing body when the lid portion has been moved to the forwardmost position.

Abstract: A polymer comprising recurring units having a multiple bond-containing acid labile group, recurring units having a phenolic hydroxyl group, and recurring units adapted to generate an acid upon exposure is used to formulate a resist composition, which exhibits a high sensitivity, low LWR and improved CDU when processed by lithography using EUV of wavelength 13.5 nm.

Abstract: A novel salt having an amide bond in its anion structure is provided. A chemically amplified resist composition comprising the salt has advantages including minimal defects and improved values of sensitivity, LWR, MEF and CDU, when processed by lithography using high-energy radiation such as KrF excimer laser, ArF excimer laser, EB or EUV.

Abstract: A polymer comprising recurring units having a multiple bond-containing acid labile group, recurring units having a phenolic hydroxyl group, and recurring units adapted to generate an acid upon exposure is used to formulate a resist composition, which exhibits a high sensitivity, low LWR and improved CDU when processed by lithography using EUV of wavelength 13.5 nm.

Abstract: A novel salt having an amide bond in its anion structure is provided. A chemically amplified resist composition comprising the salt has advantages including minimal defects and improved values of sensitivity, LWR, MEF and CDU, when processed by lithography using high-energy radiation such as KrF excimer laser, ArF excimer laser, EB or EUV.

Abstract: A polymer comprising recurring units derived from a monomer (A) adapted to be decomposed to generate an acid upon light exposure, recurring units derived from a monomer (B) having an acid labile group, and recurring units derived from a monomer (C) having a phenolic hydroxyl group, an amount of residual monomer (A) in the polymer being up to 1.0 wt %, is prepared by feeding a monomer solution containing monomers (A), (B), and (C) in a solvent (S) to a reactor and effecting polymerization reaction in the reactor. The monomer solution has a monomer concentration of at least 35 wt %. The solvent (S) contains a compound having formula (S-1) or (S-2).