Abstract: A dynamic gain equalizer using amplification instead of attenuation is disclosed. The device relies on integrated semiconductor optical amplifiers in line with a demultiplexer on a single integrated substrate for performing equalization of signals within each of a plurality of channels.

Abstract: A waveguide optical monitor is disclosed. The device has an optical input port coupled through a switch to a plurality of input waveguides. A dispersive element disperses light within the input optical waveguides toward a plurality of output waveguides. There are a plurality of photodetectors each optically coupled to an output waveguide. The photodectors are for sensing an intensity of light within the waveguide with which it is optically coupled. An optical switch in optical communication with the optical input port and for switching light received at the optical input port to one of the plurality of input waveguides.

Abstract: A waveguide optical monitor is disclosed. The device has an optical input port coupled through a switch to a plurality of input waveguides. A dispersive element disperses light within the input optical waveguides toward a plurality of output waveguides. There are a plurality of photodetectors each optically coupled to an output waveguide. The photodectors are for sensing an intensity of light within the waveguide with which it is optically coupled. An optical switch in optical communication with the optical input port and for switching light received at the optical input port to one of the plurality of input waveguides.

Abstract: The present invention relates to a semiconductor optical amplifier system integrated within a semiconductor waveguide structure. The semiconductor optical amplifier system comprises a first semiconductor optical amplifier having a first spectral response and a second semiconductor optical amplifier having a second other spectral response. The second semiconductor optical amplifier is coupled to the first semiconductor optical amplifier for optically receiving an amplified optical signal from the first semiconductor optical amplifier.

Abstract: A waveguide optical monitor is disclosed. The device has an optical input port coupled through a switch to a plurality of input waveguides. A dispersive element disperses light within the input optical waveguides toward a plurality of output waveguides. There are a plurality of photodetectors each optically coupled to an output waveguide. The photodectors are for sensing an intensity of light within the waveguide with which it is optically coupled. An optical switch in optical communication with the optical input port and for switching light received at the optical input port to one of the plurality of input waveguides.

Abstract: A homogeneous semiconductor waveguide structure having an undoped core layer and doped cladding layers on both sides of the core layer is proposed wherein the waveguide core is substantially thick providing polarization independence. Because of the cladding layers having low refractive index contrast with respect to the core and being on opposing sides resulting in a substantially symmetrical structure, the waveguide, can be made single-mode with low polarization sensitivity, thus improving characteristics for conducting light therein. Furthermore, the enlarged mode size increases coupling efficiency. Also, since the waveguide is grown from a single semiconductor composition lattice matched to the substrate, wafer uniformity and reproducibility are enhanced. The three layer structure reduces birefringence sufficiently that a yield enhancing etch stop layer can be added to the structure without substantially adverse effects.

Abstract: A waveguide optical monitor is disclosed. The device has an optical input port coupled through a switch to a plurality of input waveguides. A dispersive element disperses light within the input optical waveguides toward a plurality of output waveguides. There are a plurality of photodetectors each optically coupled to an output waveguide. The photodectors are for sensing an intensity of light within the waveguide with which it is optically coupled. An optical switch in optical communication with the optical input port and for switching light received at the optical input port to one of the plurality of input waveguides.

Abstract: A dynamic gain equalizer using amplification instead of attenuation is disclosed. The device relies on integrated semiconductor optical amplifiers in line with a demultiplexer on a single integrated substrate for performing equalization of signals within each of a plurality of channels.

Abstract: The present invention relates to a semiconductor optical amplifier system integrated within a semiconductor waveguide structure. The semiconductor optical amplifier system comprises a first semiconductor optical amplifier having a first spectral response and a second semiconductor optical amplifier having a second other spectral response. The second semiconductor optical amplifier is coupled to the first semiconductor optical amplifier for optically receiving an amplified optical signal from the first semiconductor optical amplifier.

Abstract: A waveguide structure having a homogeneous core material and opposing cladding layers is proposed wherein the waveguide core is substantially thick providing polarization independence and wherein a coupling port of the waveguide core is characterized in that it has an expanded mode for better coupling to fibre. A method is presented for producing such an expanded core.

Abstract: A planar waveguide optical device whose wavelengths are stabilized by temperature, has an input channel, a series of output data channels, and a dispersive element, such as a diffraction grating or phase array, for directing component wavelengths of incoming light into the respective output data channels. A pair of monitor channels have a separation less than, and a width greater than, the data channels. A differential feedback arrangement controls the temperature of the demultiplexer according a differential signal received from the pair of monitor channels.

Abstract: A device for compensating the temperature sensitivity normally associated with an integrated optical waveguide grating device has a temperature compensating slab waveguide region. This compensating region is provided within the slab waveguide region normally present in the grating device by modifying a sub-region of a predetermined shape and dimension to change its temperature coefficient of refractive index. This method and device can be applied to reflective and transmissive diffraction gratings and to phased array waveguide gratings.

Abstract: In a method of bandgap tuning of a quantum well heterostructure wherein ions are implanted in the heterostructure by ion implantation, the ions are implanted so that different regions are implanted in such a way as to create different concentrations of defects. This provides varying bandgap energies to various areas of the heterostructure during a subsequent thermal treatment, which removes residual defects and initiates intermixing in the quantum well region to result in a structure having a selectively shifted bandgap.

Abstract: A device for compensating the birefringence normally associated with an integrated optical waveguide grating device has a polarization compensating slab waveguide region. This compensating region can be provided within the slab waveguide region normally present in the grating device by etching, doping, ion implanting a sub-region of a predetermined shape and dimension to change its birefringence. Alternatively, or in combination with changing the birefringence in this sub-region, electrodes can be provided for electro-optically changing the birefringence dynamically as required. This device can be applied to reflective and transmissive diffraction gratings and to phased array waveguide gratings.

Abstract: An active semiconductor device that performs in a substantially polarization independent manner. A quantum well waveguide is intermixed by intermixing atoms across an interface between well and barrier layers. The atoms include at least 2 groups wherein intermixing of one group is at a substantially greater rate than another group. Cations are interdiffused at a greater rate than said anions across interfaces between well and barrier layers. The intermixing must be sufficient to provide strain within layers of the waveguide and sufficient to at least partially degenerate light hole and heavy hole bands of the structure. Preferably intermixing is sufficient to completely degenerate light hole and heavy hold bands to essentially produce a device that is completely polarization independent.

Abstract: A method of selectively tuning the bandedge of a semiconductor heterostructure includes repeatedly forming a disordered region that is spatially separated from a quantum well active region and subsequently annealing the heterostructure each time after the disordered region is formed, so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffusion at the well-barrier heterojunctions. Repeating, the disordering followed by annealing allows for a greater range in bandgap tuning. The heterostuctures of interest are IH-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.

Abstract: A method of fabricating a semiconductor heterostructure includes the growth of a quantum well active region that is highly lattice-mismatched relative to a substrate. A buffer layer having a thickness above a critical value is grown on the substrate whereby the stress due to a lattice constant mismatch between the buffer layer and substrate is relieved through the formation of misfit dislocations. A strained superlattice structure is grown on the buffer layer in order to terminate any upwardly-propagating dislocations. An unstrained barrier layer is subsequently grown on the superlattice structure. The fabrication method concludes with the growth of a quantum well structure on the unstrained layer wherein a lattice constant mismatch between the quantum well structure and the unstrained barrier layer is smaller than the lattice constant mismatch between the quantum well structure and the substrate.

Abstract: An apparatus for coupling light from a laser chip into an unetched and uncoated optical fiber includes a substrate carrier having a V-groove extending axially through the substrate carrier. The fiber has a beveled end with an inner and outer face and is positionable in the plane of the laser chip within the V-groove such that light emitted by the laser chip strikes the inner face of the beveled end and is totally internally reflected into the fiber core.

Abstract: A method of selectively tuning the bandedge of a semi-conductor heterostructure includes forming a disordered region which is spatially separated from a quantum well active region, and subsequently annealing the heterostructure so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffusion at the well-barrier heterojunctions. The tuning is spatially selective when the heterostructure is masked so that exposed portions correspond to regions where bandgap tuning is desirable. The heterostructures of interest are III-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.

Abstract: An apparatus for cryogenically cooling a sample comprises a sample chamber within which the sample is suspended, and a vacuum chamber enclosing the sample chamber. A cryogenic element forms at least part of the sample chamber and is in spaced-apart relation to the sample. The element is maintained at cryogenic temperatures by a gas cryopump. A sufficient amount of heat-conductive gas is introduced into the sample chamber for placing the sample in thermal communication with the cryogenic element, thereby cooling the sample to cryogenic temperatures.