Abstract: The present document describes a lithographic patterning method for creating features on a surface of a substrate. The patterning method includes the steps of applying a resist material to the substrate surface for providing a resist material layer, selectively exposing, dependent on a location and based on patterning data, the resist material layer to a surface treatment step for chemically modifying the resist material of the resist material layer, and developing, based on the chemical modification of the resist material, the resist material layer such as to selectively remove the resist material. In particular, prior to the step of developing, the method comprises a step of scanning at least a part of the surface using an acoustic scanning probe microscopy method for determining a local contact stiffness of the substrate surface at a plurality of locations, for measuring one or more critical dimensions of the features to be formed on the surface.

Abstract: The present document describes a lithographic patterning method for creating features on a surface of a substrate. The patterning method includes the steps of applying a resist material to the substrate surface for providing a resist material layer, selectively exposing, dependent on a location and based on patterning data, the resist material layer to a surface treatment step for chemically modifying the resist material of the resist material layer, and developing, based on the chemical modification of the resist material, the resist material layer such as to selectively remove the resist material. In particular, prior to the step of developing, the method comprises a step of scanning at least a part of the surface using an acoustic scanning probe microscopy method for determining a local contact stiffness of the substrate surface at a plurality of locations, for measuring one or more critical dimensions of the features to be formed on the surface.

Abstract: Disclosed are methods for preparing samples that include forming a first channel in a material by directing a first plurality of noble gas ions at the material, forming a second channel in the material by directing a second plurality of noble gas ions at the material, where the second channel is spaced from the first channel so that a portion of the material between channels has a mean thickness of 100 nm or less, and detaching the portion from the material to yield the sample.

Abstract: Disclosed are methods for preparing samples that include forming a first channel in a material by directing a first plurality of noble gas ions at the material, forming a second channel in the material by directing a second plurality of noble gas ions at the material, where the second channel is spaced from the first channel so that a portion of the material between channels has a mean thickness of 100 nm or less, and detaching the portion from the material to yield the sample.