Abstract: The present disclosure provides various embodiments of plasma processing systems, plasma etch process steps and methods for etching features (e.g., contact holes, vias, trenches, etc.) within one or more material layers formed on a substrate, where such material layers include but are not limited to, a metal hard mask layer formed above a dielectric layer. The embodiments disclosed herein reduce or eliminate problems, such as undercutting of the metal hard mask layer and/or recess into the underlying dielectric layer, that occur during conventional continuous wave plasma etch processes by using a pulsed plasma to etch the features within the metal hard mask layer. A radio frequency (RF) modulated pulsed plasma scheme is disclosed herein to improve anisotropic etching of the features within the metal hard mask layer.