Patents by Inventor Emilie Bernard

Emilie Bernard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a buried-gate semiconductor device and corresponding integrated circuit
    Patent number: 8039332
    Abstract: A semiconductor device includes a semiconductor channel region and a gate region, wherein the gate region includes at least one buried part extending under the channel region. The buried part of the gate region is formed from a cavity under the channel region. The cavity is filled with a first material. An opening is made to access the first material. In one implementation, aluminium is deposited in the opening in contact with the first material. An anneal is performed to cause the aluminium to be substituted for the first material in the cavity. In another implementation, a second material different from the first material is deposited in the opening. An anneal is performed to cause an alloy of the first and second materials to be formed in the cavity.
    Type: Grant
    Filed: February 12, 2009
    Date of Patent: October 18, 2011
    Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics (Grenoble) SAS, Commissariat a l'Energie Atomique
    Inventors: Emilie Bernard, Bernard Guillaumot, Philippe Coronel, Christian Vizioz
  • Method of fabricating a buried-gate semiconductor device and corresponding integrated circuit
    Patent number: 7977187
    Abstract: A semiconductor device includes a semiconductive channel region and a gate region. The gate region has at least one buried part extending under the channel region. The buried part of the gate region is formed by forming a cavity under the channel region. That cavity is at least partial filled with silicon and a metal. An annealing step is performed so as to form a silicide of said metal in the cavity. The result is a totally silicided buried gate for the semiconductor device.
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: July 12, 2011
    Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics S.A.
    Inventors: Emilie Bernard, Bernard Guillaumot, Philippe Coronel
  • METHOD OF FABRICATING A BURIED-GATE SEMICONDUCTOR DEVICE AND CORRESPONDING INTEGRATED CIRCUIT
    Publication number: 20090212330
    Abstract: A semiconductor device includes a semiconductive channel region and a gate region. The gate region has at least one buried part extending under the channel region. The buried part of the gate region is formed by forming a cavity under the channel region. That cavity is at least partial filled with silicon and a metal. An annealing step is performed so as to form a silicide of said metal in the cavity. The result is a totally silicided buried gate for the semiconductor device.
    Type: Application
    Filed: February 17, 2009
    Publication date: August 27, 2009
    Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics S.A.
    Inventors: Emilie Bernard, Bernard Guillaumot, Philippe Coronel
  • METHOD OF MANUFACTURING A BURIED-GATE SEMICONDUCTOR DEVICE AND CORRESPONDING INTEGRATED CIRCUIT
    Publication number: 20090212333
    Abstract: A semiconductor device includes a semiconductor channel region and a gate region, wherein the gate region includes at least one buried part extending under the channel region. The buried part of the gate region is formed from a cavity under the channel region. The cavity is filled with a first material. An opening is made to access the first material. In one implementation, aluminum is deposited in the opening in contact with the first material. An anneal is performed to cause the aluminum to be substituted for the first material in the cavity. In another implementation, a second material different from the first material is deposited in the opening. An anneal is performed to cause an alloy of the first and second materials to be formed in the cavity.
    Type: Application
    Filed: February 12, 2009
    Publication date: August 27, 2009
    Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics (Grenoble) SAS, Commissariat a L'Energie Atomique
    Inventors: Emilie Bernard, Bernard Guillaumot, Philippe Coronel, Christian Vizioz