Patents by Inventor Emilie M.S. Bourjot

Emilie M.S. Bourjot has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wrap-all-around contact for nanosheet-FET and method of forming same
    Patent number: 10559656
    Abstract: Described herein are nanosheet-FET structures having a wrap-all-around contact where the contact wraps entirely around the S/D epitaxy structure, thereby increasing contact area and ultimately allowing for improved S/D contact resistance. Other aspects described include nanosheet-FET structures having an air gap as a bottom isolation area to reduce parasitic S/D leakage to the substrate.
    Type: Grant
    Filed: May 2, 2018
    Date of Patent: February 11, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Emilie M. S. Bourjot, Julien Frougier, Yi Qi, Ruilong Xie, Hui Zang, Hsien-Ching Lo, Zhenyu Hu
  • WRAP-ALL-AROUND CONTACT FOR NANOSHEET-FET AND METHOD OF FORMING SAME
    Publication number: 20190341448
    Abstract: Various aspects of the disclosure include nanosheet-FET structures having a wrap-all-around contact where the contact wraps entirely around the S/D epitaxy structure, not just on the top and sides of the S/D epitaxy structure, thereby increasing contact area and ultimately allowing for improved S/D contact resistance. Other aspects of the disclosure include nanosheet-FET structures having a bottom isolation to reduce parasitic S/D leakage to the substrate.
    Type: Application
    Filed: May 2, 2018
    Publication date: November 7, 2019
    Inventors: Emilie M.S. Bourjot, Julien Frougier, Yi Qi, Ruilong Xie, Hui Zang, Hsien-Ching Lo, Zhenyu Hu