Patents by Inventor Emilio G. Ghio

Emilio G. Ghio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5407852
    Abstract: ROM memories made in MOS or CMOS technology with LDD cells may be programmed advantageously in a relatively advanced stage of fabrication by decoupling an already formed drain region from the channel region of cells to be permanently made nonconductive (programmed) by implanting a dopant in an amount sufficient to invert the type of conductivity in a portion of the drain region adjacent to the channel region. In CMOS processes, the programming mask may be a purposely modified mask commonly used for implanting source/drain regions of transistors of a certain type of conductivity. By using high-energy implantation and a dedicated mask, the programming may be effected at even later stages of the fabrication process.
    Type: Grant
    Filed: June 28, 1993
    Date of Patent: April 18, 1995
    Assignee: SGS-Thomson Microelectronics, S.r.l.
    Inventors: Emilio G. Ghio, Giuseppe Meroni, Danilo Re, Livio Baldi