Abstract: Systems and methods for forming solar cells with CuInSe2 and Cu(In,Ga)Se2 films are provided. In one embodiment, a method comprises: during a first stage (220), performing a mass transport through vapor transport of an indium chloride (InClx) vapor (143, 223) and Se vapor (121, 225) to deposit a semiconductor film (212, 232, 252) upon a substrate (114, 210, 230, 250); heating the substrate (114, 210, 230, 250) and the semiconductor film to a desired temperature (112); during a second stage (240) following the first stage (220), performing a mass transport through vapor transport of a copper chloride (CuClx) vapor (143, 243) and Se vapor (121, 245) to the semiconductor film (212, 232, 252); and during a third stage (260) following the second stage (240), performing a mass transport through vapor transport of an indium chloride (InClx) vapor (143, 263) and Se vapor (121, 265) to the semiconductor film (212, 232, 252).

Abstract: The present invention describes a method for the preparation of graphene or graphenic material films by the carbonization of biopolymers. The method comprises the following stages: preparation of an aqueous solution of a non-crystallizable water-soluble biopolymer or a derivative of said biopolymer at the suitable pH, coating of the substrate with the aqueous solution of the biopolymer prepared in the previous stage by immersion of the substrate in said solution or by using the spin coating technique, conditioning of the aqueous solution of the biopolymer by means of a hydrothermal process consisting of subjecting the coated surface to a flow of nitrogen saturated with water vapor at the temperature of between 100 and 250° C. for a time between 30 minutes and several hours, thermal decomposition of the biopolymer deposited on the substrate in the absence of oxygen at temperatures below 1200° C.

Abstract: The invention presents an evaporation source for transporting chemical precursors to a substrate on which the latter are deposited by means of condensation, formed by a principal tube (1) which houses the precursors in its lower part, and which has heating means (8). An inlet (5) and an outlet (6) for carrier gases is arranged in the upper part of the principal tube (1), said inlet (5) and outlet (6) being located on the lateral surface (7) of the principal tube (1), opposing each other and aligned along a common line which passes transversally through the lateral surface (7) of the principal tube (1). The invention also presents a method of evaporation for transporting chemical precursors in which introducing and extracting the carrier gases from the principal tube (1) is carried out in alignment in a direction transversal to the lateral surface (7) of the latter.

Abstract: The present invention relates to the procedure for the preparation of barrier and/or dielectric layers on a substrate, characterized in that it comprises the following stages: (a) cleaning the substrate, (b) placing the substrate on a sample holder and the introduction thereof into a vacuum chamber, (c) dosage of said vacuum chamber with an inert gas and a reactive gas, (d) injection into the vacuum chamber of a volatile precursor that has at least one cation of the compound to be deposited, (e) activation of a radio frequency source and activation of at least one magnetron, (f) decomposition of the volatile precursor using plasma, the reaction between the cation of the volatile precursor and the reactive gas occurring at the same time that the reaction between the reactive gas contained in the plasma and the cation from the target by sputtering takes place, thus leading to the deposition of the film onto the substrate. The device for carrying out said method is also object of the invention.

Abstract: Method for obtaining solid samples or suspensions of graphene optionally doped with heteroatoms from synthetic or natural polymers, which are subjected to pyrolysis in a furnace without oxygen at temperatures of between 400° C. and 1,200° C. and subsequently to a liquid-phase exfoliation phase. The polymers used are preferably polysaccharides, such as chitosan, alginate and alginic acid, which can be optionally doped with any heteroatom. The invention is intended primarily for use in microelectronics and photovoltaic devices in which graphene sheets are very useful. In addition, the graphene prepared cn be uses as an additive for polymers and ceramic materials.

Abstract: The present invention relates to a method for creating electrical contacts in optoelectronic and electronic devices, including high and low concentration solar cells, thin films, organic light emitting diodes (OLED) and in general any device requiring the extraction or injection of a current by means of electrical contacts. The method comprises the following stages: (a) depositing the contact material on the final substrate through the laser induced forward transfer (LIFT) of said material from a donor substrate to the final substrate, preferably using a pulsed laser and (b) sintering the contact material using a laser source, preferably a continuous laser. The contacts thus created present excellent conductivity and adherence properties, as well as high height (thickness) to width ratios.

Abstract: The present invention relates to formulations comprising aluminum nitride nanoparticles, at least one dispersant and at least one aqueous solvent, to the method for obtaining said formulations as well as to their use for obtaining a leveling barrier layer.

Abstract: Systems and methods for forming solar cells with CuInSe2 and Cu(In,Ga)Se2 films are provided. In one embodiment, a method comprises: during a first stage (220), performing a mass transport through vapor transport of an indium chloride (InClx) vapor (143, 223) and Se vapor (121, 225) to deposit a semiconductor film (212, 232, 252) upon a substrate (114, 210, 230, 250); heating the substrate (114, 210, 230, 250) and the semiconductor film to a desired temperature (112); during a second stage (240) following the first stage (220), performing a mass transport through vapor transport of a copper chloride (CuClx) vapor (143, 243) and Se vapor (121, 245) to the semiconductor film (212, 232, 252); and during a third stage (260) following the second stage (240), performing a mass transport through vapor transport of an indium chloride (InClx) vapor (143, 263) and Se vapor (121, 265) to the semiconductor film (212, 232, 252).

Abstract: A fuel cell for use with a hydride-based fuel, which fuel cell is designed for being sealed in a liquid-tight manner when in operation. The fuel cell comprises means for eliminating hydrogen formed inside the fuel cell. This abstract is neither intended to define the invention disclosed in this specification nor intended to limit the scope of the invention in any way.