Patents by Inventor Emily E. Gallagher
Emily E. Gallagher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9052617Abstract: Methods and structures for extreme ultraviolet (EUV) lithography are disclosed. A method includes determining a phase error correction for a defect in an EUV mask, determining an amplitude error correction for the EUV mask based on both the defect in the EUV mask and the phase error correction, and modifying the EUV mask with the determined phase error correction and the determined amplitude error correction.Type: GrantFiled: June 2, 2014Date of Patent: June 9, 2015Assignee: International Business Machines CorporationInventors: Emily E. Gallagher, Gregory R. McIntyre, Alfred Wagner
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Publication number: 20140272687Abstract: Methods and structures for extreme ultraviolet (EUV) lithography are disclosed. A method includes determining a phase error correction for a defect in an EUV mask, determining an amplitude error correction for the EUV mask based on both the defect in the EUV mask and the phase error correction, and modifying the EUV mask with the determined phase error correction and the determined amplitude error correction.Type: ApplicationFiled: June 2, 2014Publication date: September 18, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Emily E. GALLAGHER, Gregory R. MCINTYRE, Alfred WAGNER
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Patent number: 8765331Abstract: Extreme ultraviolet lithography (EUVL) masks and methods of manufacturing are provided. A method includes forming a sub-resolution phase shift grating in a multilayer reflective film beneath a border region of an absorber layer of an extreme ultraviolet lithography (EUVL) mask. The sub-resolution phase shift grating reduces a reflectivity of the border region of the mask.Type: GrantFiled: August 17, 2012Date of Patent: July 1, 2014Assignee: International Business Machines CorporationInventors: Emily E. Gallagher, Gregory R. McIntyre
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Patent number: 8769445Abstract: A method and system arrangement for controlling and determining mask operation activities. Upon obtaining chip physical layout design data and running resolution enhancement technology on the chip physical layout design to generate mask features which may include any sub-resolution assist features, a placement sensitivity metric is determined for each of the generated mask features or edge fragments. In one alternative embodiment an edge placement sensitivity metric is determined for each edge of the generated mask features or edge fragments. The determined sensitivity metrics for each feature are classified and applied to subsequent mask operational activities such as post processing, write exposure and mask repair.Type: GrantFiled: September 22, 2010Date of Patent: July 1, 2014Assignee: International Business Machines CorporationInventors: Emily E. Gallagher, Jed H. Rankin, Alan E. Rosenbluth
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Patent number: 8748063Abstract: Methods and structures for extreme ultraviolet (EUV) lithography are disclosed. A method includes determining a phase error correction for a defect in an EUV mask, determining an amplitude error correction for the EUV mask based on both the defect in the EUV mask and the phase error correction, and modifying the EUV mask with the determined phase error correction and the determined amplitude error correction.Type: GrantFiled: August 1, 2012Date of Patent: June 10, 2014Assignee: International Business Machines CorporationInventors: Emily E. Gallagher, Gregory R. McIntyre, Alfred Wagner
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Publication number: 20140051015Abstract: Extreme ultraviolet lithography (EUVL) masks and methods of manufacturing are provided. A method includes forming a sub-resolution phase shift grating in a multilayer reflective film beneath a border region of an absorber layer of an extreme ultraviolet lithography (EUVL) mask. The sub-resolution phase shift grating reduces a reflectivity of the border region of the mask.Type: ApplicationFiled: August 17, 2012Publication date: February 20, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Emily E. GALLAGHER, Gregory R. MCINTYRE
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Publication number: 20140038087Abstract: Methods and structures for extreme ultraviolet (EUV) lithography are disclosed. A method includes determining a phase error correction for a defect in an EUV mask, determining an amplitude error correction for the EUV mask based on both the defect in the EUV mask and the phase error correction, and modifying the EUV mask with the determined phase error correction and the determined amplitude error correction.Type: ApplicationFiled: August 1, 2012Publication date: February 6, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Emily E. GALLAGHER, Gregory R. MCINTYRE, Alfred WAGNER
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Patent number: 8538129Abstract: A method for characterizing the resolution of mask inspection tool using a test mask and a database containing defect data. A variety of defect types and sizes is programmed into the database, and the database is then used to inspect the defect-free mask. All defects programmed into the database are not captured in performing the method, so the resolution capability of an inspection tool can be determined.Type: GrantFiled: October 9, 2009Date of Patent: September 17, 2013Assignee: International Business Machines CorporationInventors: Karen D. Badger, Emily E Gallagher, Christoper Magg
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Publication number: 20120070064Abstract: A method and system arrangement for controlling and determining mask operation activities. Upon obtaining chip physical layout design data and running resolution enhancement technology on the chip physical layout design to generate mask features which may include any sub-resolution assist features, a placement sensitivity metric is determined for each of the generated mask features or edge fragments. In one alternative embodiment an edge placement sensitivity metric is determined for each edge of the generated mask features or edge fragments. The determined sensitivity metrics for each feature are classified and applied to subsequent mask operational activities such as post processing, write exposure and mask repair.Type: ApplicationFiled: September 22, 2010Publication date: March 22, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Emily E. Gallagher, Jed H. Rankin, Alan E. Rosenbluth
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Publication number: 20110085723Abstract: A method and programmed defect test database for designing and building programmed defect test masks. The method uses a defect free mask that is compared to a ‘defective’ database. A variety of defect types and sizes is programmed into the database and used to inspect the defect-free mask. All defects programmed into the database are not affected by performing the method, regardless of size, so the resolution capability of an inspection tool can be determined.Type: ApplicationFiled: October 9, 2009Publication date: April 14, 2011Applicant: International Business Machines CorporationInventors: Karen D. Badger, Emily E. Gallagher, Christopher Magg
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Patent number: 7198872Abstract: A light scattering EUVL mask and a method of forming the same comprises depositing a crystalline silicon layer over an ultra low expansion substrate, depositing a hardmask over the crystalline silicon layer, patterning the hardmask; etching the crystalline silicon layer, removing the hardmask, and depositing a Mo/Si layer over the crystalline silicon layer, wherein etched regions of the crystalline silicon layer comprise uneven surfaces in the etched regions. The method further comprises depositing a photoresist mask over the hardmask, creating a pattern in the photoresist mask, and transferring the pattern to the hardmask.Type: GrantFiled: May 25, 2004Date of Patent: April 3, 2007Assignee: International Business Machines CorporationInventors: Emily E. Gallagher, Louis M. Kindt, Carey W. Thiel