Abstract: A memory apparatus includes a first electrode having a spin orbit material. The memory apparatus further includes a first memory device on a portion of the first electrode and a first dielectric adjacent to a sidewall of the first memory device. The memory apparatus further includes a second memory device on a portion of the first electrode and a second dielectric adjacent to a sidewall of the second memory device. A second electrode is on and in contact with a portion of the first electrode, where the second electrode is between the first memory device and the second memory device. The second electrode has a lower electrical resistance than an electrical resistance of the first electrode. The memory apparatus further includes a first interconnect structure and a second interconnect, each coupled with the first electrode.

Abstract: A magnetic memory device comprising a plurality of memory cells is disclosed. The memory device includes an array of memory cells where each memory cell includes a first material layer having a ferromagnetic material, a second material layer having ruthenium, and a third material layer having bismuth and/or antimony. The second material layer is sandwiched between the first material layer and the third material in a stacked configuration.

Abstract: In one embodiment, an apparatus includes a magnet, a first structure, and a second structure. The first structure includes a first conductive trace and a magnetoelectric material. The first conductive trace is coupled to an input voltage terminal, and the magnetoelectric material is coupled to the first conductive trace and the magnet. The second structure includes a superlattice structure and a second conductive trace. The superlattice structure includes one or more topological insulator materials. Moreover, the superlattice structure is coupled to the magnet and the second conductive trace, and the second conductive trace is coupled to an output voltage terminal.

Abstract: Spin orbit torque (SOT) devices with topological insulator (TI) and heavy metal insert are described. In an example, an integrated circuit structure includes a spin orbit coupling (SOC) interconnect including a TI material. A magnetic layer is above the SOC interconnect. An insert layer includes a heavy metal between and in contact with the TI material and the magnetic layer.

Abstract: A two-sided stamp and method of using and manufacturing the same. The two-sided stamp comprises a first stamping surface and a second stamping surface. The first stamping surface is capable of transferring a quantity of ink from an ink source to an article to be stamped. The first stamping surface can also include one or more openings. The second stamping surface is likewise capable of transferring a quantity of ink from an ink source to an article to be stamped. The second stamping surface can also include one or more openings. The openings in the first flat surface and the openings in the second flat surface can be continuous and extend between the first stamping surface and the second stamping surface.

Abstract: A magnetic memory device comprising a plurality of memory cells is disclosed. The memory device includes an array of memory cells where each memory cell includes a first material layer having a ferromagnetic material, a second material layer having ruthenium, and a third material layer having bismuth and/or antimony. The second material layer is sandwiched between the first material layer and the third material in a stacked configuration.

Abstract: A memory apparatus includes a first electrode having a spin orbit material. The memory apparatus further includes a first memory device on a portion of the first electrode and a first dielectric adjacent to a sidewall of the first memory device. The memory apparatus further includes a second memory device on a portion of the first electrode and a second dielectric adjacent to a sidewall of the second memory device. A second electrode is on and in contact with a portion of the first electrode, where the second electrode is between the first memory device and the second memory device. The second electrode has a lower electrical resistance than an electrical resistance of the first electrode. The memory apparatus further includes a first interconnect structure and a second interconnect, each coupled with the first electrode.

Abstract: The stamp comprises a base and a stamping surface. The stamping surface includes one or more singularities; one or more conjoined singularities; and one or more fused singularity sections all of substantially uniform height. The singularities can be protrusions separated by one or more gaps. The conjoined singularities can include one or more connections between them, wherein the connections are substantially the same height as the stamping surface and can be part of the stamping surface. A method of manufacturing an improved stamp is also disclosed.

Abstract: A method and a system for providing convertible or interactive messaging between two or more users is provided. In an embodiment, a user sends a convertible message to another user. Such convertible messages can be sent using a communication means having two or more fields, ports, or the like. One of the fields, ports, or the like is used to identify the transmission as a convertible message. Another of the fields, ports, or the like is used to relay the text, icon, etc. of the message. Upon recognition of the convertible message, the receiving device allows for the display of the convertible message. The receiving user may manually accept to view the convertible message, and/or may view/not view the convertible message automatically upon receipt due to predefined rules.

Abstract: A method of suppressing undesirable cell proliferation, such as tumor growth, is provided comprising the step of increasing the level of PCL2 in target cells.

Abstract: A method of suppressing undesirable cell proliferation, such as tumour growth, is provided comprising the step of increasing the level of PCL2 in target cells.

Abstract: A method and a system for providing convertible or interactive messaging between two or more users is provided. In an embodiment, a user sends a convertible message to another user. Such convertible messages can be sent using a communication means having two or more fields, ports, or the like. One of the fields, ports, or the like is used to identify the transmission as a convertible message. Another of the fields, ports, or the like is used to relay the text, icon, etc. of the message. Upon recognition of the convertible message, the receiving device allows for the display of the convertible message. The receiving user may manually accept to view the convertible message, and/or may view/not view the convertible message automatically upon receipt due to predefined rules.