Patents by Inventor Emmanuel Batt

Emmanuel Batt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Modification of the wet characteristics of deposited layers and in-line control
    Patent number: 6348419
    Abstract: A method for adjusting an etch rate of a nitride layer, in accordance with the present invention includes, in a reaction chamber, providing a surface for depositing a nitride layer. The nitride layer is deposited on the surface by adjusting processing parameters to control an etch rate achievable for the nitride layer. The etch rate achievable results from the depositing step such that an ability to etch the nitride layer is determined by the adjustment of the process parameters. A refractive index measurement may be provided for monitoring the achievable etch rate for the nitride layer.
    Type: Grant
    Filed: August 18, 1999
    Date of Patent: February 19, 2002
    Assignees: Infineon Technologies AG, International Business Machines Corporation
    Inventors: Frank Grellner, Paul C. Jamison, Glen L. Miles, David C. Mosher, Emmanuel Batt