Patents by Inventor Emmanuel Bayard Perrin

Emmanuel Bayard Perrin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing insulated-gate MOS transistors
    Patent number: 8878331
    Abstract: A method for defining an insulator in a semiconductor substrate includes forming a trench in the substrate, forming in the trench an insulating material having its upper surface arranged above the surface of the substrate, and forming a diffusion barrier layer in a portion of the insulating material located above the surface of the semiconductor substrate. Such insulators can be used, for example, to insulate and delineate electronic components or portions of components formed in the substrate.
    Type: Grant
    Filed: October 24, 2012
    Date of Patent: November 4, 2014
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Mickael Gros-Jean, Clement Gaumer, Emmanuel Bayard Perrin