Abstract: A thermo-electric generator includes a semiconductor membrane with a phononic structure containing at least one P-N junction. The membrane is suspended between a first support designed to be coupled to a cold thermal source and a second support designed to be coupled to a hot thermal source. The structure for suspending the membrane has an architecture allowing the heat flux to be redistributed within the plane of the membrane.

Abstract: A thermo-electric generator includes a semiconductor membrane with a phononic structure containing at least one P-N junction. The membrane is suspended between a first support designed to be coupled to a cold thermal source and a second support designed to be coupled to a hot thermal source. The structure for suspending the membrane has an architecture allowing the heat flux to be redistributed within the plane of the membrane.

Abstract: A thermo-electric generator includes a semiconductor membrane with a phononic structure containing at least one P-N junction. The membrane is suspended between a first support designed to be coupled to a cold thermal source and a second support designed to be coupled to a hot thermal source. The structure for suspending the membrane has an architecture allowing the heat flux to be redistributed within the plane of the membrane.

Abstract: A tunnel-effect power converter including first and second electrodes having opposite surfaces, wherein the first electrode includes protrusions extending towards the second electrode.

Abstract: A thermo-electric generator includes a semiconductor membrane with a phononic structure containing at least one P-N junction. The membrane is suspended between a first support designed to be coupled to a cold thermal source and a second support designed to be coupled to a hot thermal source. The structure for suspending the membrane has an architecture allowing the heat flux to be redistributed within the plane of the membrane.

Abstract: This method for making complementary p and n MOSFET transistors with Schottky source and drain electrodes controlled by a gate electrode, comprising: making source and drain electrodes from a single silicide for both p and n transistors; segregating first impurities from groups II and III of the periodic table at the interface between the silicide and the channel of the p transistor, the complementary n transistor being masked; and segregating second impurities from groups V and VI of the periodic table, at the interface between the silicide and the channel of the n transistor, and the complementary p transistor being masked.

Abstract: This method for making complementary p and n MOSFET transistors with Schottky source and drain electrodes controlled by a gate electrode, comprising: making source and drain electrodes from a single silicide for both p and n transistors; segregating first impurities from groups II and III of the periodic table at the interface between the silicide and the channel of the p transistor, the complementary n transistor being masked; and segregating second impurities from groups V and VI of the periodic table, at the interface between the silicide and the channel of the n transistor, and the complementary p transistor being masked.

Abstract: An input device with a pressure-sensitive element using a pressure sensing resistor. A solid elastomeric material is mounted over the pressure sensing resistor to transfer a force from the user's finger to the pressure sensitive resistor without visible deformation of the elastomeric material. This provides a comfortable button for a user which does not require the compression of a domed cap to provide pressure-sensing input. In another aspect of the invention, a pressure-sensing input element utilizes both the amount of pressure and the amount of time to determine the type of signal provided to the electronic system. In another aspect of the present invention, an input device contains a first scrolling element (e.g. a wheel) and includes a switch button mounted close to the scrolling element to activate continuous scrolling.

Abstract: A digital writing system according to one embodiment of the present invention captures handwritten gestures in addition to text and patterns. It may include, among other things, a digital pen, special erasable ink and paper, and application software for the managing of captured files with a corresponding user interface. A digital pen according to one embodiment of the present invention may include character recognition subsystem, function control subsystem with selection mechanisms, a processor subsystem, memory subsystems, and wired or wireless communication subsystems. In addition, embodiments of a digital pen according to the present invention may include additional functional features including, for example, a user notification (e.g., alarm) feature, a digital camera feature, voice recording and recognition features, calendar features, calculator features, biometric sensor features, and the like.

Abstract: This invention relates to a MOS transistor made in the thin film of silicon of an SOI chip (10), said thin film (13) being slightly doped and of less than 30 nm in thickness, the source (14) and drain (15) contacts being of the Schottky type at the lowest level of Schottky barrier possible for majority carriers, with an accumulation type transistor operation.

Abstract: An input device with a pressure-sensitive element using a force-sensing resistor. A solid elastomeric material is mounted over the force-sensing resistor to transfer a force from the user's finger to the force-sensitive resistor without visible deformation of the elastomeric material. This provides a comfortable button for a user which does not require the compression of a domed cap to provide pressure-sensing input. In another aspect of the invention, a pressure-sensing input element utilizes both the amount of pressure and the amount of time to determine the type of signal provided to the electronic system. In another aspect of the present invention, an input device contains a first scrolling element (e.g. a wheel) and includes a switch button mounted close to the scrolling element to activate continuous scrolling.

Abstract: This invention relates to a MOS transistor made in the thin film of silicon of an SOI chip (10), said thin film (13) being slightly doped and of less than 30 nm in thickness, the source (14) and drain (15) contacts being of the Schottky type at the lowest level of Schottky barrier possible for majority carriers, with an accumulation type transistor operation.