Abstract: A method of purifying tap water to produce deionized type 2 pure water on a laboratory scale with a volume of up to 300 l/h using a water purification system, the method including detecting the permeate flow rate produced by a reverse-osmosis device downstream of a permeate outlet; detecting the flow rate of retentate flow that is removed from the system downstream of a first flow rate regulator; and remote controlling the first and a second flow rate regulators based on the detection results from first and second flow meters such that a predetermined target recovery rate and a predetermined target permeate flow rate are controlled.

Abstract: This method for determining a skin colour of a region of interest of a user, comprises: —importing, from an image library (LIB) of a user computational device (APP), at least one image (IMk) comprising a representation of the region of interest of the user; —performing processing (TS) of said at least one image (IMk) with a machine-learning model (AI_TS) suitable for providing, for each imported image (IMk), a numerical value (ClrEstm_k) representative of the skin colour of the region of interest present in said at least None imported image (IMk); —performing evaluation (EVAL) of the skin colour of the region of interest on the basis of said one or more numerical values (ClrEstm_k) of each imported image.

Abstract: A method of accurately and precisely providing desired functionality to an electronic or opto-electronic component is disclosed in which a Femtosecond laser pulse is used to ablate material from a surface of or from within a component. The component is in active operation during the ablation process in order to facilitate the ablation process. The process also involves detection and feedback to indicate when a repair is sufficiently complete. The detection is also performed while the component is powered allowing in-situ detection and ablation. Of course, forms of facilitation other than feedback such as monitoring are also applicable to the invention.

Abstract: The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials.

Abstract: The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials.

Abstract: A method of accurately and precisely providing desired functionality to an electronic or opto-electronic component is disclosed in which a Femtosecond laser pulse is used to ablate material from a surface of or from within a component. The component is in active operation during the ablation process in order to facilitate the ablation process. The process also involves detection and feedback to indicate when a repair is sufficiently complete. The detection is also performed while the component is powered allowing in-situ detection and ablation. Of course, forms of facilitation other than feedback such as monitoring are also applicable to the invention.

Abstract: The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials.

Abstract: The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials.

Abstract: The invention pertains to an electromagnetic wave modulator comprising a quantum well semiconductor structure having two adjacent wells, the coupling of which is modified under the effect of an electrical field by the use of the phenomenon of anti-crossing of resonating levels. With this type of modulator, it is possible to attain 20% of modulation (as in the prior art) but with heightened sensitivity to the electrical field and a very short response time.

Abstract: A quantum well wave modulator comprises a central well sandwiched by two lateral wells. The central well is populated with electrons and the two lateral wells, having different constitutions, are coupled to the central well so as to modulate two light waves under the effect of the application of an electrical field perpendicularly to the structure in one direction or in the opposite direction.