Patents by Inventor Emmanuel H. Lingunis

Emmanuel H. Lingunis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride barrier layer for protection of ONO structure from top oxide loss in fabrication of SONOS flash memory
    Patent number: 6680509
    Abstract: A method for fabricating a SONOS device having a buried bit-line including the steps of: providing a semiconductor substrate having an ONO structure overlying the semiconductor substrate; forming a nitride barrier layer on the ONO structure to form, a four-layer stack; forming a patterned photoresist layer on the nitride barrier layer; implanting As or P ions through the four-layer stack to form a bit-line buried under the ONO structure; stripping the photoresist layer and cleaning an upper surface of the four-layer stack; and consolidating the four-layer stack by applying an oxidation cycle. The invention further relates to a SONOS-type device including the nitride barrier layer.
    Type: Grant
    Filed: May 30, 2002
    Date of Patent: January 20, 2004
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Yider Wu, Jean Yee-Mei Yang, Mark Ramsbey, Emmanuel H. Lingunis, Yu Sun
  • Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memory
    Patent number: 6440797
    Abstract: A method for fabricating a SONOS device having a buried bit-line including the steps of: providing a semiconductor substrate having an ONO structure overlying the semiconductor substrate; forming a nitride barrier layer on the ONO structure to form a four-layer stack; forming a patterned photoresist layer on the nitride barrier layer; implanting As or P ions through the four-layer stack to form a bit-line buried under the ONO structure; stripping the photoresist layer and cleaning an upper surface of the four-layer stack; and consolidating the four-layer stack by applying an oxidation cycle. The invention further relates to a SONOS-type device including the nitride barrier layer.
    Type: Grant
    Filed: September 28, 2001
    Date of Patent: August 27, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Yider Wu, Jean Yee-Mei Yang, Mark Ramsbey, Emmanuel H. Lingunis, Yu Sun