Abstract: The invention relates to an electrode, to the method for manufacturing same and to a device for storing and delivering electric power including same. The electrode of the invention includes a mounting, made of a conductor or semiconductor material, the mounting including, on at least one of the surfaces thereof, at least one nanostructure made of a semiconductor material, characterized by also including a protective layer made of a material selected among a dielectric material having an intrinsic capacity of 1.5 10?6 to 10 10?6 F/cm2 and a metal, the layer having a thickness that is less than the height of said nanostructure, and covering the at least one nanostructure. The invention is useful in the field of electrochemical storage and, in particular, in the field of ultracapacitors.

Abstract: The arrangement for supercapacitor device comprises an electrode (1) provided with an electrically conductive element (4). It also comprises a separator element (3) fixed against a first face (4a) of the electrically conductive element (4), the arrangement being perforated with a plurality of through holes (5) which pass through both the electrically conductive element (4) and the separator element (3). The perforated separator element (3) forms a membrane that is both electrically insulating and porous to ions of an electrolyte of the supercapacitor device. The electrically conductive element (4) of the electrode (1) being perforated, the equivalent surface area of the electrodes of the supercapacitor device is dependent on the number of holes made and on their depth.

Abstract: The arrangement for supercapacitor device comprises an electrode (1) provided with an electrically conductive element (4). It also comprises a separator element (3) fixed against a first face (4a) of the electrically conductive element (4), the arrangement being perforated with a plurality of through holes (5) which pass through both the electrically conductive element (4) and the separator element (3). The perforated separator element (3) forms a membrane that is both electrically insulating and porous to ions of an electrolyte of the supercapacitor device. The electrically conductive element (4) of the electrode (1) being perforated, the equivalent surface area of the electrodes of the supercapacitor device is dependent on the number of holes made and on their depth.

Abstract: A modulator including a waveguide propagating an electromagnetic wave of given wavelength (?) with absorption. Means such as an electrical junction enable the residence time of the electromagnetic wave in the guide to be modified. A corresponding modulation method is also provided.

Abstract: The invention concerns a capacitive junction including a region adapted to be traversed by an electromagnetic wave, and a dielectric layer interposed between two semiconductor material layers. The dielectric layer has a reduced thickness at the region, that is a thickness at the region less than its thickness at a contact of the junction. Such a junction is for instance used to form a modulator. The invention also concerns a method for making such a junction.

Abstract: A modulator including a waveguide propagating an electromagnetic wave of given wavelength (?) with absorption. Means such as an electrical junction enable the residence time of the electromagnetic wave in the guide to be modified. A corresponding modulation method is also provided.

Abstract: A light emission device and method for producing the device. The device includes, on a substrate, a stack including an etching stop layer, a first barrier layer, an emitting layer, and a second barrier layer. The stop layer is of the same nature as the emitting layer. One may form a mirror on the stack, eliminate the substrate by etching, and form another mirror on the stop layer to obtain a micro-cavity. The device may be applied in particular to the detection of gas.

Abstract: The invention relates to a process for the formation of a silicon layer (22a) with a determined thickness on a support (10), for optical purposes. The process comprises the following steps: a) molecular bonding of a silicon block (20a) on the support, the silicon block having a surface layer (22a) delimited by a cleavage area, b) cleavage of the silicon block along the cleavage area to detach the surface layer from it, c) adjustment of the thickness of the said surface layer. Applications to the manufacture of optical components.

Abstract: The invention relates to a multilayer monolithic electronic device comprising at least one first layer (46) capable of conveying information in an electrical form, arranged above at least one second layer (43) capable of conveying information in an optical form, and electrical and/or optical connection means.

Abstract: A tuneable active microcavity and a process for manufacturing a tuneable active microcavity. The microcavity includes a first mirror, a second mirror, and a layer of an active material. A piezoelectric actuator placed outside the space located between the first and second mirrors modifies the relative distance separating the first and second mirrors under action of a control signal. The piezoelectric actuator includes a first face rigidly connected to the first mirror and a second face rigidly connected to the second mirror such that each of the first and second mirrors is free to move under action of the control signal applied to the piezoelectric actuator.

Abstract: The invention relates to a process for the formation of a silicon layer (22a) with a determined thickness on a support (10), for optical purposes.

Abstract: Light emission device and method for producing said device.

Abstract: The invention concerns a light emitting and guiding device comprising at least one active region (22) in silicon and the means for creating photons in the said active region. In accordance with the invention, the means for creating the photons comprise a diode (22c, 22d) formed in the active region. In addition, the device includes the means for confining the carriers injected by the diode, and the silicon in the active region is mono-crystalline.

Abstract: A multispectral resonant-cavity detector is formed of at least one cavity (2) resonating at not less than two wavelengths and containing at least two layers (12, 14) that absorb the corresponding radiation and are placed at antinodes specific to stationary waves in the cavity, the cavity having at least two P-N junctions at whose space charge zones the layers are disposed. For each cavity, there are at least two electrical contacts to polarize the two junctions inversely to each other to detect the corresponding radiation.