Abstract: An ultraviolet razor blade treatment system for providing a cleaning treatment to a shaving razor is disclosed. The ultraviolet razor blade treatment system can include a shaving razor cleaning unit that has at least one ultraviolet radiation source and sensor to clean surfaces of the shaving razor for purposes of disinfection, sterilization, and/or sanitization.

Abstract: A diffusive ultraviolet illuminator is provided. The illuminator can include a reflective mirror and a set of ultraviolet radiation sources located within a proximity of the focus point of the reflective mirror. The ultraviolet radiation from the set of ultraviolet radiation sources is directed towards a reflective surface located adjacent to the illuminator. The reflective surface can diffusively reflect at least 30% the ultraviolet radiation and the diffusive ultraviolet radiation can be within at least 40% of Lambertian distribution. A set of optical elements can be located between the illuminator and the reflective surface in order to direct the ultraviolet radiation towards at least 50% of the reflective surface.

Abstract: A tanning or a phototherapy system including a light source including light emitting elements configured to emit ultraviolet (UV) light having different peak wavelengths, a controller configured to control luminous characteristics of the light source, and a sensor configured to sense at least one of the luminous characteristics of the light source and a user's skin condition, in which the luminous characteristics of the light source are controlled by the controller based on the user's skin condition sensed by the sensor, and controlling the luminous characteristics comprises increasing or decreasing luminous intensity of one or more of the light emitting elements.

Abstract: A metal-organic chemical vapor deposition (MOCVD) growth with temperature controlled layer is described. A substrate or susceptor can have a temperature controlled layer formed thereon to adjust the temperature uniformity of a MOCVD growth process used to epitaxially grow semiconductor layers. In one embodiment, the substrate and/or the susceptor can be profiled with a shape that improves temperature uniformity during the MOCVD growth process. The profiled shape can be formed with material that provides a desired temperature distribution to the substrate that is in accordance with a predetermined temperature profile for the substrate for a particular MOCVD process.

Abstract: A lighting system includes an ultraviolet (UV) light source including a UVA light source configured to emit UVA light having various wavelengths; and a UVB light source configured to emit UVB light and control a lighting direction of the UVB light towards a target, a sensor including a UVA sensor configured to sense the UVA light, and a control unit configured to control lighting characteristics of the UV light source, in which the lighting characteristics include an intensity of the UVA light.

Abstract: A tanning or a phototherapy system including a light source including light emitting elements configured to emit ultraviolet (UV) light having different peak wavelengths, a controller configured to control luminous characteristics of the light source, and a sensor configured to sense at least one of the luminous characteristics of the light source and a user's skin condition, in which the luminous characteristics of the light source are controlled by the controller based on the user's skin condition sensed by the sensor, and controlling the luminous characteristics comprises increasing or decreasing luminous intensity of one or more of the light emitting elements.

Abstract: A diffusive ultraviolet illuminator is provided. The illuminator can include a reflective mirror and a set of ultraviolet radiation sources located within a proximity of the focus point of the reflective mirror. The ultraviolet radiation from the set of ultraviolet radiation sources is directed towards a reflective surface located adjacent to the illuminator. The reflective surface can diffusively reflect at least 30% the ultraviolet radiation and the diffusive ultraviolet radiation can be within at least 40% of Lambertian distribution. A set of optical elements can be located between the illuminator and the reflective surface in order to direct the ultraviolet radiation towards at least 50% of the reflective surface.

Abstract: An ultraviolet razor blade treatment system for providing a cleaning treatment to a shaving razor is disclosed. The ultraviolet razor blade treatment system can include a shaving razor cleaning unit that has at least one ultraviolet radiation source and sensor to clean surfaces of the shaving razor for purposes of disinfection, sterilization, and/or sanitization.

Abstract: A metal-organic chemical vapor deposition (MOCVD) growth with temperature controlled layer is described. A substrate or susceptor can have a temperature controlled layer formed thereon to adjust the temperature uniformity of a MOCVD growth process used to epitaxially grow semiconductor layers. In one embodiment, the substrate and/or the susceptor can be profiled with a shape that improves temperature uniformity during the MOCVD growth process. The profiled shape can be formed with material that provides a desired temperature distribution to the substrate that is in accordance with a predetermined temperature profile for the substrate for a particular MOCVD process.

Abstract: An optoelectronic device module with improved light emission of approximately 4? steradians is provided. In one embodiment, the optoelectronic device module includes a first and a second set of optoelectronic devices. Each optoelectronic device includes a first contact and a second contact. A contact element including a first lateral side and a second lateral side connects the optoelectronic devices. The first contact of each optoelectronic device in the first set of optoelectronic devices is connected to the first lateral side of the contact element and the first contact of each optoelectronic device in the second set of optoelectronic devices is connected to the second lateral side of the contact element.

Abstract: Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180° to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture.

Abstract: Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180° to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture.

Abstract: Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180° to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture.

Abstract: A deposition system includes a substrate holder supporting a substrate defining at least one topographical feature. In addition, the system includes a deposition plume that is directed toward the substrate. A first profiler mask is positioned between the deposition plume and the substrate, and is shaped so as to reduce inboard/outboard asymmetry in a deposition profile associated with the feature.