Patents by Inventor Emmanuel Nolot

Emmanuel Nolot has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7692782
    Abstract: Method for the fabrication of Haze noise standards having, respectively, an insulating thin layer and a plurality of nano-structures of hemi-spherical form on the insulating thin layer, with the respective standards being fabricated by: the formation on at least one insulating layer of seeds made of a first semi-conductor material by chemical deposition from a first precursor gas for the first semi-conductor material, formation on the insulating layer of nano-structures based on a second semi-conductor material and in the form of hemi-spheres, from stable seeds of the first semi-conductor material, by chemical deposition from a second precursor gas of the second semi-conductor material. The invention also relates to a calibration method using standards obtained by means of such a method.
    Type: Grant
    Filed: July 21, 2006
    Date of Patent: April 6, 2010
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Emmanuel Nolot
  • Publication number: 20070019188
    Abstract: The invention relates to a method for the fabrication of Haze noise standards having, respectively, an insulating thin layer (102, 202) and a plurality of nano-structures (114, 116, 214, 216) of hemi-spherical form on the insulating thin layer, with the respective standards being fabricationd by: the formation on at least one insulating layer (102, 202) of seeds (106, 107) made of a first semi-conductor material by chemical deposition from a first precursor gas (104) for the first semi-conductor material, formation on the insulating layer (102, 202) of nano-structures (114, 116, 2141, 2142, 2143, 2144) based on a second semi-conductor material and in the form of hemi-spheres, from stable seeds of the first semi-conductor material, by chemical deposition from a second precursor gas (110) of the second semi-conductor material. The invention also relates to a calibration method using standards obtained by means of such a method.
    Type: Application
    Filed: July 21, 2006
    Publication date: January 25, 2007
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventor: Emmanuel Nolot