Abstract: The present invention relates to a semiconductor device, comprising a semiconductor substrate (102) with a thickness of less than 100 micrometer and with a first substrate side and an opposite second substrate side. A plurality of at least four monolithically integrated Zener or avalanche diodes (164,166,168,170) with a reverse breakdown voltage of less than 20 V are defined in the semiconductor substrate and connected with each other in a series connection. The diodes are defined in a plurality of mutually isolated substrate islands (120,122,124,126) in the semiconductor substrate, at least one diode per substrate island. The substrate islands are laterally surrounded by through-substrate isolations extending from the first to the second substrate side and comprising a filling (128) that electrically isolates a respective substrate island from a respective laterally surrounding area of the semiconductor substrate.

Abstract: The invention relates to an ESD protection device comprising: a first contact (10) and a second contact (20), and an electrical node (12); a bipolar transistor (6) having a base, an emitter, and a collector, the base and emitter forming a base-emitter junction, the base and collector forming a base-collector junction, the emitter being connected to the first contact (10), the collector being connected to the second contact (20), the base being connect to the electrical node (12); a first diode (1) connected between the electrical node (12) and the first contact (10), the first diode (1) comprising a first junction arranged in the same direction as the base-emitter junction, and—a second diode (2) connected between the electrical node (12) and the second contact (20), in anti-series with the first diode (1) on a path from the first contact (10) to the second contact (20), the second diode (2) comprising a second junction arranged in the same direction as the base-collector junction, wherein the bipolar transis

Abstract: The present invention relates to a semiconductor device, comprising a semiconductor substrate (102) with a thickness of less than 100 micrometer and with a first substrate side and an opposite second substrate side. A plurality of at least four monolithically integrated Zener or avalanche diodes (164,166,168,170) with a reverse breakdown voltage of less than 20 V are defined in the semiconductor substrate and connected with each other in a series connection. The diodes are defined in a plurality of mutually isolated substrate islands (120,122,124,126) in the semiconductor substrate, at least one diode per substrate island. The substrate islands are laterally surrounded by through-substrate isolations extending from the first to the second substrate side and comprising a filling (128) that electrically isolates a respective substrate island from a respective laterally surrounding area of the semiconductor substrate.

Abstract: The invention relates to an ESD protection device comprising: a first contact (10) and a second contact (20), and an electrical node (12); a bipolar transistor (6) having a base, an emitter, and a collector, the base and emitter forming a base-emitter junction, the base and collector forming a base-collector junction, the emitter being connected to the first contact (10), the collector being connected to the second contact (20), the base being connect to the electrical node (12); a first diode (1) connected between the electrical node (12) and the first contact (10), the first diode (1) comprising a first junction arranged in the same direction as the base-emitter junction, and—a second diode (2) connected between the electrical node (12) and the second contact (20), in anti-series with the first diode (1) on a path from the first contact (10) to the second contact (20), the second diode (2) comprising a second junction arranged in the same direction as the base-collector junction, wherein the bipolar transis

Abstract: The invention relates to a test device for testing an integrated circuit called test circuit, comprising a plurality of housings intended to be tested in a printed circuit called main circuit. The device comprises an insulating membrane of soft material having two opposite surfaces covered by two conductive layers interconnected by via holes and intended to be in contact with the test circuit and the main circuit respectively, under the influence of a pressure exerted during the test between the test circuit and the main circuit pressing the test device. Protrusions are arranged on at least one of the two layers in a predefined pattern as a function of said pins, tabs, pads etc. of the test circuit so as to ensure a contact quality between said layer and the circuit (to be tested or the main circuit) having contact with said layer under the influence of said pressing action.

Abstract: The invention relates to a test device for testing an integrated circuit called circuit to be tested, comprising one of a plurality of housings in a printed circuit called main circuit. The device comprises an insulating membrane of soft material having two opposite surfaces covered by two conductive layers interconnected by via holes and intended to be in contact with the circuit to be tested and the main circuit respectively, under the influence of a pressure exerted during the test. Protrusions are arranged on at least one of the two layers in a predefined pattern as a function of pins, tabs, pads etc. of the circuit to be tested so as to ensure a contact quality between said layer and the circuit (to be tested or the main circuit) having contact with said layer under the influence of said pressing action.

Abstract: A transmitter of radioelectric signals includes a plurality of amplifiers PA1, PA2 for amplifying a signal Sin whose frequency is included in a predetermined frequency band, said signal Sin alternately carrying information and being in the quiescent state during first and second predetermined periods of time. The transmitter additionally includes a detector DET intended to supply a detection signal AP having active states and inactive states during the first and the second predetermined periods of time, respectively, and a controller CNT intended to supply signals S1 and S2, when the detection signal AP is in the active state, which signals are used to inhibit the amplifiers which are not optimized for the frequency band wherein the frequency of the signal Sin to be amplified is included.

Abstract: The invention relates to a transmitter of radioelectric signals comprising a plurality of amplifiers PA1, PA2 for amplifying a signal Sin whose frequency is included in a predetermined frequency band, said signal Sin alternately carrying information and being in the quiescent state during first and second predetermined periods of time.