Patents by Inventor Emmanuelle Dupont

Emmanuelle Dupont has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6878900
    Abstract: A method of accurately and precisely providing desired functionality to an electronic or opto-electronic component is disclosed in which a Femtosecond laser pulse is used to ablate material from a surface of or from within a component. The component is in active operation during the ablation process in order to facilitate the ablation process. The process also involves detection and feedback to indicate when a repair is sufficiently complete. The detection is also performed while the component is powered allowing in-situ detection and ablation. Of course, forms of facilitation other than feedback such as monitoring are also applicable to the invention.
    Type: Grant
    Filed: January 25, 2001
    Date of Patent: April 12, 2005
    Assignee: National Research Council of Canada
    Inventors: Paul B. Corkum, Emmanuel Dupont, Hui Chun Liu, Xiaonong Zhu
  • Patent number: 6750072
    Abstract: The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials.
    Type: Grant
    Filed: April 7, 2003
    Date of Patent: June 15, 2004
    Assignee: National Research Council of Canada
    Inventors: Margaret Buchanan, Martin Byloos, Shen Chiu, Emmanuel Dupont, Mae Gao, Hui Chun Liu, Chun-ying Song
  • Publication number: 20030211648
    Abstract: The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials.
    Type: Application
    Filed: April 7, 2003
    Publication date: November 13, 2003
    Inventors: Margaret Buchanan, Martin Byloos, Shen Chiu, Emmanuel Dupont, Mae Gao, Hui Chun Liu, Chun-Ying Song
  • Publication number: 20030111447
    Abstract: A method of accurately and precisely providing desired functionality to an electronic or opto-electronic component is disclosed in which a Femtosecond laser pulse is used to ablate material from a surface of or from within a component. The component is in active operation during the ablation process in order to facilitate the ablation process. The process also involves detection and feedback to indicate when a repair is sufficiently complete. The detection is also performed while the component is powered allowing in-situ detection and ablation. Of course, forms of facilitation other than feedback such as monitoring are also applicable to the invention.
    Type: Application
    Filed: September 30, 2002
    Publication date: June 19, 2003
    Inventors: Paul B. Corkum, Emmanuel Dupont, Hui Chun Liu, Xiaonong Zhu
  • Patent number: 6576490
    Abstract: The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials.
    Type: Grant
    Filed: December 14, 2001
    Date of Patent: June 10, 2003
    Assignee: National Research Council of Canada
    Inventors: Margaret Buchanan, Martin Byloos, Shen Chiu, Emmanuel Dupont, Mae Gao, Hui Chun Liu, Chun-ying Song
  • Publication number: 20030092212
    Abstract: The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials.
    Type: Application
    Filed: December 14, 2001
    Publication date: May 15, 2003
    Inventors: Margaret Buchanan, Martin Byloos, Shen Chiu, Emmanuel Dupont, Mae Gao, Hui Chun Liu, Chun-Ying Song
  • Patent number: 5432634
    Abstract: The invention pertains to an electromagnetic wave modulator comprising a quantum well semiconductor structure having two adjacent wells, the coupling of which is modified under the effect of an electrical field by the use of the phenomenon of anti-crossing of resonating levels. With this type of modulator, it is possible to attain 20% of modulation (as in the prior art) but with heightened sensitivity to the electrical field and a very short response time.
    Type: Grant
    Filed: October 13, 1993
    Date of Patent: July 11, 1995
    Assignee: Thomson-CSF
    Inventors: Emmanuel Dupont, Dominique Delacourt, Michel Papuchon
  • Patent number: 5249075
    Abstract: A quantum well wave modulator comprises a central well sandwiched by two lateral wells. The central well is populated with electrons and the two lateral wells, having different constitutions, are coupled to the central well so as to modulate two light waves under the effect of the application of an electrical field perpendicularly to the structure in one direction or in the opposite direction.
    Type: Grant
    Filed: April 24, 1992
    Date of Patent: September 28, 1993
    Assignee: Thomson-CSF
    Inventors: Dominique Delacourt, Michel Papuchon, Emmanuel Dupont, Nakita Vojdani
  • Patent number: D775533
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: January 3, 2017
    Assignee: HARRY WINSTON SA
    Inventor: Emmanuelle Dupont
  • Patent number: D775970
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: January 10, 2017
    Assignee: HARRY WINSTON SA
    Inventor: Emmanuelle Dupont
  • Patent number: D775971
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: January 10, 2017
    Assignee: HARRY WINSTON SA
    Inventor: Emmanuelle Dupont
  • Patent number: D775972
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: January 10, 2017
    Assignee: HARRY WINSTON SA
    Inventor: Emmanuelle Dupont