Abstract: An apparatus and process for plasma enhanced chemical vapor deposition with an inductively coupled plasma with ion densities above 1010 cm?3 and energies below 20 eV at the substrate enables epitaxial deposition of group IV and compound semiconductor layers at high rates and low substrate temperatures. The epitaxial reactor allows for in-situ plasma cleaning by chlorine and fluorine containing gaseous species.

Abstract: This invention describes a method for cleaning a deposition chamber that is compatible with large area deposition. It comprises transport of activated gas from a remote plasma source to an area in the chamber in a uniform way through at least two injection points on equivalent paths for the reactive species. A respective gas injection system for the distribution of activated reactive gas comprises a source of reactive gas, a tubing for distributing the gas and an evacuable chamber. The gas is discharged to the tubing having at least one inlet constructively connected to the source and at least two outlets open to the chamber, thereby forming at least partially independent tube branches, wherein the length and the cross-section perpendicular to the gas flow of each tube branch, calculated between inlet and each respective outlet is essentially equal.