Abstract: A gas injection apparatus for a thermal processing chamber includes a gas injector having an inlet at a first end and a port at a second end; and a plate having a first opening matching the port, one or more second openings, and at least one circuitous flow path defined by the plate and fluidly connecting the first opening to the one or more second openings.

Abstract: Embodiments described herein generally relate to a processing apparatus having a cover piece that participates in preheating a process gas. In one implementation, the cover piece includes an annulus. The annulus has an inner wall with a first height, an outer wall with a second height, and a top surface. The second height is greater than the first height. The cover piece also includes an inner lip disposed adjacent the inner wall, and a plurality of fins disposed on the top surface of the annulus. The cover piece and the plurality of fins are an opaque quartz material. The cover piece provides for more efficient heating of process gases, is composed of a material capable of withstanding process conditions while providing for more efficient and uniform processing, and has a low CTE reducing particle contamination due to excessive expansion during processing.

Abstract: A gas injection apparatus for a thermal processing chamber includes a gas injector having an inlet at a first end and a port at a second end; and a plate having a first opening matching the port, one or more second openings, and at least one circuitous flow path defined by the plate and fluidly connecting the first opening to the one or more second openings.

Abstract: A gas injection apparatus for a thermal processing chamber includes a gas injector having an inlet at a first end and a port at a second end; and a plate having a first opening matching the port, one or more second openings, and at least one circuitous flow path defined by the plate and fluidly connecting the first opening to the one or more second openings.

Abstract: Embodiments described herein generally relate to a processing apparatus having a cover piece that participates in preheating a process gas. In one implementation, the cover piece includes an annulus. The annulus has an inner wall with a first height, an outer wall with a second height, and a top surface. The second height is greater than the first height. The cover piece also includes an inner lip disposed adjacent the inner wall, and a plurality of fins disposed on the top surface of the annulus. The cover piece and the plurality of fins are an opaque quartz material. The cover piece provides for more efficient heating of process gases, is composed of a material capable of withstanding process conditions while providing for more efficient and uniform processing, and has a low CTE reducing particle contamination due to excessive expansion during processing.

Abstract: Implementations described herein generally relate to a processing apparatus having a rotor cover for preheating the process gas. The apparatus includes a chamber body having a side wall and a bottom wall defining an interior processing region. The chamber also includes a substrate support disposed in the interior processing region of the chamber body, a ring support, and a rotor cover. The rotor cover is disposed on a ring support. The rotor cover is an opaque quartz material. The rotor cover advantageously provides for more efficient heating of process gases, is composed of a material capable of withstanding process conditions while providing for more efficient and uniform processing, and has a low CTE reducing particle contamination due to excessive expansion during processing.

Abstract: A gas injection apparatus for a thermal processing chamber includes a gas injector having an inlet at a first end and a port at a second end; and a plate having a first opening matching the port, one or more second openings, and at least one circuitous flow path defined by the plate and fluidly connecting the first opening to the one or more second openings.

Abstract: A method for forming an oxide layer having improved thickness uniformity on a substrate is disclosed. The method includes heating a substrate disposed in a processing chamber to a temperature less than about 700 degrees Celsius, flowing a first gas mixture into the processing chamber from a first gas inlet, and flowing a second gas mixture into the processing chamber from a second gas inlet. The composition and flow rate of the second gas mixture, and the composition and flow rate of the first gas mixture are controlled so the oxide layer formed on the substrate has improved thickness uniformity.

Abstract: Methods and apparatus for thermal management of a precursor for use in substrate processing are provided herein. In some embodiments, an apparatus for thermal management of a precursor for use in substrate processing may include a body having an opening sized to receive a storage container having a liquid or solid precursor disposed therein, the body fabricated from thermally conductive material; one or more thermoelectric devices coupled to the body proximate the opening; a heat sink coupled to the one or more thermoelectric devices; and a fan disposed proximate to a back side of the heat sink to provide a flow of air to the heat sink.

Abstract: Embodiments disclosed herein generally include a method for forming an oxide layer having improved thickness uniformity on a substrate. The method includes heating a substrate disposed in a processing chamber to a temperature less than about 700 degrees Celsius, flowing a first gas mixture into the processing chamber from a first gas inlet, and flowing a second gas mixture into the processing chamber from a second gas inlet. The composition and flow rate of the second gas mixture, and the composition and flow rate of the first gas mixture are controlled so the oxide layer formed on the substrate has improved thickness uniformity.

Abstract: Methods and apparatus for thermal management of a precursor for use in substrate processing are provided herein. In some embodiments, an apparatus for thermal management of a precursor for use in substrate processing may include a body having an opening sized to receive a storage container having a liquid or solid precursor disposed therein, the body fabricated from thermally conductive material; one or more thermoelectric devices coupled to the body proximate the opening; a heat sink coupled to the one or more thermoelectric devices; and a fan disposed proximate to a back side of the heat sink to provide a flow of air to the heat sink.