Abstract: Various embodiments of the present disclosure provide a semiconductor device structure. In one embodiment, the semiconductor device structure includes a first source/drain feature and a second source/drain feature, a plurality of semiconductor layers vertically stacked and disposed between the first and second source/drain features, a gate electrode layer surrounding a portion of each of the plurality of the semiconductor layers, and an interfacial layer (IL) disposed between the gate electrode layer and one of the plurality of the semiconductor layers, wherein a topmost semiconductor layer of the plurality of the semiconductor layers has a first length, and the IL has a second length greater than the first length.

Abstract: This invention relates to a rare earth nanomaterial labeled biomolecule, its labeling method and a dissolution-enhanced time-resolved fluoroimmunoassay based on the rare earth nanomaterial. The rare earth nanomaterial serves as a label having stable properties, large specific surface area, strong modifiability, low-cost and thousands of lanthanide ions contained in each nanocrystal, the labeling ratio of rare earth ions can be greatly improved.

Abstract: This invention relates to a rare earth nanomaterial labeled biomolecule, its labeling method and a dissolution-enhanced time-resolved fluoroimmunoassay based on the rare earth nanomaterial. The rare earth nanomaterial serves as a label having stable properties, large specific surface area, strong modifiability, low-cost and thousands of lanthanide ions contained in each nanocrystal, the labeling ratio of rare earth ions can be greatly improved.