Abstract: A radial-leaded over-current protection device includes a PTC device, first and second electrode leads and an insulating encapsulation layer. The PTC device has first and a second conductive layers and a PTC material layer therebetween. The PTC material layer has a resistivity less than 0.18 ?-cm and includes crystalline polymer and conductive ceramic filler. The ceramic filler has a resistivity less than 500 ?-cm and is 35-65% by volume of the PTC material layer. The first electrode lead has an end connecting to the first conductive layer, whereas the second electrode lead has an end connecting to the second conductive layer. The insulating encapsulation layer wraps the PTC device and the ends of the conductive layers. The radial-leaded over-current protection device at 25° C. has a value of hold current thereof divided by an area of the PTC device ranging from 0.027-0.3A/mm2. Each electrode lead has a cross-sectional area of at least 0.16 mm2.

Abstract: A radial-leaded over-current protection device includes a PTC device, first and second electrode leads and an insulating encapsulation layer. The PTC device has first and a second conductive layers and a PTC material layer therebetween. The PTC material layer has a resistivity less than 0.18 ?-cm and includes crystalline polymer and conductive ceramic filler. The ceramic filler has a resistivity less than 500 ?-cm and is 35-65% by volume of the PTC material layer. The first electrode lead has an end connecting to the first conductive layer, whereas the second electrode lead has an end connecting to the second conductive layer. The insulating encapsulation layer wraps the PTC device and the ends of the conductive layers. The radial-leaded over-current protection device at 25° C. has a value of hold current thereof divided by an area of the PTC device ranging from 0.027-0.3 A/mm2. Each electrode lead has a cross-sectional area of at least 0.16 mm2.

Abstract: A surface mountable over-current protection device comprises one PTC material layer, first and second conductive layers, first and second electrodes, and an insulating layer. The PTC material layer comprises crystalline polymer and conductive filler dispersed therein. The first and second conductive layers are disposed on first and second planar surfaces of the PTC material layer, respectively. The first and second electrodes are electrically connected to the first and second conductive layers. The insulating layer is disposed between the first and the second electrodes for insulation. At the melting point of the crystalline polymer, the CTE of the crystalline polymer is greater than 100 times the CTE of the first or second conductive layer, and the first and/or second conductive layers has a thickness which is large enough to obtain a resistance jump value R3/Ri less than 1.4.

Abstract: A surface mountable over-current protection device comprises one PTC material layer, first and second conductive layers, first and second electrodes, and an insulating layer. The PTC material layer comprises crystalline polymer and conductive filler dispersed therein. The first and second conductive layers are disposed on first and second planar surfaces of the PTC material layer, respectively. The first and second electrodes are electrically connected to the first and second conductive layers. The insulating layer is disposed between the first and the second electrodes for insulation. At the melting point of the crystalline polymer, the CTE of the crystalline polymer is greater than 100 times the CTE of the first or second conductive layer, and the first and/or second conductive layers has a thickness which is large enough to obtain a resistance jump value R3/Ri less than 1.4.

Abstract: A heat-conductive dielectric polymer material having an inter-penetrating-network (IPN) structure includes a polymer component, a curing agent, and a heat-conductive filler uniformly dispersed in the polymer component. The polymer component includes a thermoplastic plastic and a thermosetting epoxy resin. The curing agent is used to cure the thermosetting epoxy resin at a curing temperature. The heat conductivity of the heat-conductive dielectric polymer material is larger than 0.5 W/mK. A heat dissipation substrate including the heat-conductive dielectric polymer material in the present invention has a thickness of less than 0.5 mm and bears a voltage of over 1000 volts.

Abstract: A heat dissipation material comprises (1) fluorine-containing crystalline polymer having a melting point higher than 150° C., with a weight percentage of around 15-40%; (2) heat conductive fillers dispersed in the fluorine-containing crystalline polymer with a weight percentage of around 60-85%; and (3) coupling agent of 0.5-3% of the heat conductive fillers by weight and having a chemical formula of: where R1, R2 and R3 are alkyl group CaH2a+1, a?1; X and Y are selected from hydrogen, fluorine, chorine, and alkyl group; and n is a positive integer.

Abstract: A heat-conductive dielectric polymer material having an inter-penetrating-network (IPN) structure includes a polymer component, a curing agent, and a heat-conductive filler uniformly dispersed in the polymer component. The polymer component includes a thermoplastic plastic and a thermosetting epoxy resin. The curing agent is used to cure the thermosetting epoxy resin at a curing temperature. The heat conductivity of the heat-conductive dielectric polymer material is larger than 0.5 W/mK. A heat dissipation substrate including the heat-conductive dielectric polymer material in the present invention has a thickness of less than 0.5 mm and bears a voltage of over 1000 volts.

Abstract: A heat dissipation substrate for an electronic device comprises a first metal layer, a second metal layer, and a thermally conductive polymer dielectric insulating layer. A surface of the first metal layer carries the electronic device, e.g., a light-emitting diode (LED) device. The thermally conductive polymer dielectric insulating layer is stacked between the first metal layer and the second metal layer in a physical contact manner, and interfaces therebetween include at least one micro-rough surface with a roughness Rz larger than 7.0. The micro-rough surface includes a plurality of nodular projections, and the grain sizes of the nodular projections mainly are in a range of 0.1-100 ?m. The heat dissipation substrate has a thermal conductivity larger than 1.0 W/m·K, and a thickness smaller than 0.5 mm, and comprises (1) a fluorine-containing polymer with a melting point higher than 150° C.

Abstract: The conductive polymer composition used in an over-current protection device blends a polymer substrate (for instance, PVDF) with the polyolefin and the conductive filler of carbon black alike. The polyolefin comprises of two monomers along the carbon chain to form its principal chemical structure. The first monomer includes four hydrogen atoms to bond with the carbon chain, and the second monomer includes at least one fluorine atom and at least one non-fluorine halogen atom. The non-fluorine halogen atom may be selected from chlorine, bromine and iodine elements.

Abstract: The conductive polymer composition used in an over-current protection device blends a polymer substrate (for instance, PVDF) with the polyolefin and the conductive filler of carbon black alike. The polyolefin comprises of two monomers along the carbon chain to form its principal chemical structure. The first monomer includes four hydrogen atoms to bond with the carbon chain, and the second monomer includes at least one fluorine atom and at least one non-fluorine halogen atom. The non-fluorine halogen atom may be selected from chlorine, bromine and iodine elements.