Patents by Inventor Enayet U. Issaq

Enayet U. Issaq has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5610433
    Abstract: A high value inductor with a high Q factor is formed using integrated circuit techniques to have a plurality of layers, where each layer has formed on it two or more coils. The coils in the various layers are interconnected in series. Although the resulting inductor exhibits a relatively high resistance, the number of coil turns is large. Since inductance increases in proportion to the square of the number of coil turns, the resulting inductor has a very high Q factor. A cross-over arrangement located in one level provides compact connections between turns in a different level.
    Type: Grant
    Filed: March 13, 1995
    Date of Patent: March 11, 1997
    Assignee: National Semiconductor Corporation
    Inventors: Richard B. Merrill, Enayet U. Issaq
  • Patent number: 5039602
    Abstract: A method of characterizing A.C. performance of an integrated circuit based upon D.C. measurements utilizing a process monitor circuit. The process monitor circuit provides a D.C. output having a magnitude which varies with the frequency of an oscillator section of the monitor circuit. The frequency is a function of both A.C. and D.C. performance, therefore the process monitor output signal is indicative of such performance. Since D.C. measurements may be made while the integrated circuits are in wafer form utilizing a conventional wafer prober and parametric tester, it is possible to detect A.C. performance problems very early in the manufacturing process.
    Type: Grant
    Filed: March 19, 1990
    Date of Patent: August 13, 1991
    Assignee: National Semiconductor Corporation
    Inventors: Richard B. Merrill, Edson D. Gomersall, Enayet U. Issaq