Abstract: A method for simultaneous bumping/bonding an IC chip to a semiconductor substrate and a semiconductor package fabricated by the method are described. In the method, a plurality of edge-type conductive pads formed of under-bump-metallurgy layers are first fabricated on an IC chip by dicing through conductive pads formed on a silicon wafer. The edge-type conductive pads, or UBM layer, are then positioned in close proximity to conductive elements formed on a top surface of a semiconductor substrate. A volume of solder is then applied to the interface between the conductive pads and the conductive elements to form electrical bonds between the two. A suitable method for applying the volume of solder may be a solder jetting technique, a solder printing technique or a method utilizing pre-applied solder paste on the surfaces to be bonded together.